Thermal stability of nitrogen in nitrided HfSiO2 / SiO2 /Si (001) ultrathin films

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Herrera Gomez, A ^a,b   Aguirre Tostado, F S ^a   Quevedo Lopez, M A ^a   Kirsch, P D ^c   Kim, M J ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINDING ENERGY; BINDING SITES; ELECTRON ENERGY LOSS SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; MASS SPECTROMETRY; NITRIDES; NITROGEN; NONMETALS; NUCLEAR ENERGY; PHOTOELECTRON SPECTROSCOPY; POTENTIAL ENERGY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON NITRIDE; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

CHEMICAL COMPONENTS; DIELECTRIC STACKS; HIGH RESOLUTIONS; NITROGEN COMPONENTS; NITROGEN DEPTH PROFILES; SI(001); SILICON LAYERS; SILICON OXYNITRIDE; THERMAL STABILITIES; TIME OF FLIGHT SECONDARY ION MASS SPECTROSCOPIES; TOTAL AMOUNTS; TRANSMISSION ELECTRON MICROSCOPY IMAGES; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS DATUMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 57049164840     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021051     Document Type: Article

References (31)

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