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Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2292-2296

Suppression of silicidation in polycrystalline-Si/ high-κ insulator/SiO2/Si structure by helium through process

(1) Muraoka, Kouichi a

a TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATORS; ELECTRODES; HELIUM; PYROLYSIS; QUENCHING; SPUTTERING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; VIBRATION MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH TEMPERATURE ANNEALING; SILICIDATION; THERMAL DESORPTION SPECTROSCOPY;

POLYCRYSTALLINE MATERIALS;

EID: 4344581493 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1773382 Document Type: Article

Times cited : (8)

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