Enhancement of the effective tunnel mass in ultrathin silicon dioxide layers

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2681-2690

  Stadele M ^a   Sacconi, F ^b   Di Carlo, A ^b   Lugli, P ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC POWER UTILIZATION; ELECTROSTATICS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; MATRIX ALGEBRA; MOSFET DEVICES;

POWER CONSUMPTION;

SILICA;

EID: 0037349764     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1541107     Document Type: Article

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