Development of GaN-based vertical-cavity surface-emitting lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 3, 2009, Pages 850-860

  Lu, Tien Chang ^a   Chen, Jun Rong ^a   Chen, Shih Wei ^a   Kuo, Hao Chung ^a   Kuo, Chien Cheng ^b   Lee, Cheng Chung ^b   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Distributed Bragg reflector (DBR); Electrical pumping; GaN; Superlattice; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

BLUE WAVELENGTH; CONTINUOUS WAVE OPERATION; COUPLING EFFICIENCY; DEVICE STRUCTURES; DISTRIBUTED BRAGG REFLECTOR (DBR); DIVERGENCE ANGLE; ELECTRICAL PUMPING; ELECTRICALLY PUMPED; FABRICATION TECHNOLOGIES; GAN; HIGH QUALITY; HIGH REFLECTIVITY; INJECTION CURRENTS; LASING ACTION; NARROW-LINE WIDTH; OPTICALLY PUMPED; PERFORMANCE CHARACTERISTICS; POLARIZATION RATIOS; ROOM TEMPERATURE; VERTICAL-CAVITY SURFACE EMITTING LASER; VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL);

BRAGG CELLS; DISTRIBUTED BRAGG REFLECTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; MICROOPTICS; OPTICAL WAVEGUIDES; OPTICALLY PUMPED LASERS; PUMPING (LASER); PUMPS; REFLECTION; SEMICONDUCTING GALLIUM; SUPERLATTICES;

SURFACE EMITTING LASERS;

EID: 67650931043     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2013181     Document Type: Article

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