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Volumn 88, Issue 19, 2006, Pages
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Crack-free fully epitaxial nitride microcavity with AlGaN/GaN distributed Bragg reflectors and InGaN/GaN quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
LIGHT EMISSION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
SEMICONDUCTOR QUANTUM WELLS;
ALN ANTICRACKING LAYER;
BRAGG REFLECTORS;
MICROCAVITY;
MIRRORS;
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EID: 33646700495
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2202702 Document Type: Article |
Times cited : (23)
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References (13)
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