The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 Distributed Bragg reflectors

IEEE Photonics Technology Letters

Volumn 18, Issue 7, 2006, Pages 877-879

  Kao, Chih Chiang ^a   Lu, T C ^a   Huang, H W ^a   Chu, J T ^a   Peng, Y C ^a   Yao, H H ^a   Tsai, J Y ^a   Kao, T T ^a   Kuo, H C ^a   Wang, S C ^a   Lin, C F ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

AlN; Distributed Bragg reflector (DBR); GaN; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

ALN; BLUE WAVELENGTH; COUPLING EFFICIENCY; DBR; DEGREE OF POLARIZATION; HIGH CHARACTERISTIC TEMPERATURE; LASING CHARACTERISTICS; LINEAR POLARIZATION; NEAR-FIELD EMISSION; ROOM TEMPERATURE; VERTICAL-CAVITY SURFACE EMITTING LASER;

DISTRIBUTED BRAGG REFLECTORS; FIELD EMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; OPTICAL PUMPING; OPTICAL WAVEGUIDES; POLARIZATION; REFLECTION; SILICON COMPOUNDS; SURFACE EMITTING LASERS; TANTALUM;

DBR LASERS;

EID: 33748956320     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.871814     Document Type: Article

References (13)

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