Surface-emitting laser - its birth and generation of new optoelectronics field

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 6, 2000, Pages 1201-1215

  Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LOCAL AREA NETWORKS; MICROLENSES; OPTICAL INTERCONNECTS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS;

BRAGG REFLECTORS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034313134     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.902168     Document Type: Article

References (15)

1. K. Iga, F. Koyama, and S. Kinoshita, "Surface emitting semiconductor laser," IEEE J. Quant. Electron., vol. 24, pp. 1845-1855, Sept. 1988.
2. K. Iga, "Surface emitting laser," Trans. IEICE, C-1, vol. JBl-C-1, no. 9, pp. 483-193, Sept. 1998.
3. H. Soda, K. Iga, C. Kitahara, and Y. Suematsu, "GaInAsP/InP surface emitting injection lasers," Jpn. J. Appl. Phys., vol. 18, pp. 2329-2330, Dec. 1979.
4. th = 6 mA," Electron. Lett., vol. 23, no. 3, pp. 134-136, Jan. 1987.
5. F. Koyama, S. Kinoshita, and K. Iga, "Room-temperature continuous wave lasing characteristics of GaAs vertical cavity surface-emitting laser," Appl. Phys. Lett., vol. 55, no. 3, pp. 221-222, July 1989.
6. J. L. Jewell, S. L. McCall, A. Scherer, H. H. Houh, N. A. Whitaker, A. C. Gossard, and J. H. English, "Transverse modes, waveguide dispersion and 30-ps recovery in submicron GaAs/AlAs microresonators," Appl. Phys. Lett., vol. 55, pp. 22-24, July 1989.
7. R. Geels and L. A. Coldren, "Narrow-linewidth, low threshold verticalcavity surface-emitting lasers," in 12th IEEE Int. Semiconductor Laser Conf., vol. B-1, 1990, pp. 16-17.
8. T. Wipiejewski, K. Panzlaf, E. Zeeb, and K. J. Ebeling, "Submilliamp vertical cavity laser diode structure with 2.2-nm continuous tuning," in 18th European Conf. Opt. Comm. '92, Sept. 1992, PDII-4.
9. Y. H. Lee, B. Tell, K. F. Brown-Goebeler, R. E. Leibenguth, and V. D. Mattera, "Deep-red continuous wave top-surface-emitting verticalcavity AlGaAs superlattice lasers," IEEE Photon. Technol. Lett., vol. 3, no. 2, pp. 108-109, Feb. 1991.
10. T. Miyamoto, T. Uchida, N. Yokouchi, Y. Inaba, F. Koyama, and K. Iga, "A study on gain-resonance matching of CBE grown l = 1.5 μm surface emitting lasers," IEEE/LEOS Annu., no. DLTA13.2, p. 542, Nov. 1992.
11. T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga, "Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser," Electron. Lett., vol. 29, no. 10, pp. 913-914, May 1993.
12. D. I. Babic, K. Streubel, R. P. Mirin, J. Pirek, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars, L. Yang, and K. Carey, "Room temperature performance of double-fused 1.54 μm vertical-cavity lasers," in IPRM 96, Apr. 1996, no. ThA1-2.
13. K. D. Choquette, R. P. Schneider, M. H. Crawford, K. M. Geib, and J. J. Figiel, "Continuous wave operation of 640-660 nm selectively oxidised AlGaInP vertical cavity lasers," Electron. Lett., vol. 31, pp. 1145-1146, July 1995.
14. K. Iga, "Possibility of Green/Blue/UV surface emitting lasers," in Int. Symp. Blue Laser Light Emitting Diodes, Mar. 1996, Th-11, pp. 263-266.
15. T. Someya, K. Tachibana, Y. Arakawa, J. Lee, and T. Kamiya, "Lasing oscillation in InGaN vertical cavity surface emitting lasers," in 16th Int. Semiconductor Laser Conf., 1998, PD-1, pp. 1-2.