Design and fabrication of VCSEL's with AL xC y-GaAs DBR's

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 905-915

  MacDougal, Michael H ^a,b,c   Dapkus, P Daniel ^a,b   Bond, Aaron E ^a,b   Lin, Chao Kun ^b   Geske, Jon ^a,b,c  

^a IEEE   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c Gore Photonics   (United States)

Author keywords

Distributed Bragg reflector lasers; Optical device fabrication; Semiconductor growth; Semiconductor heterojunctions; Semiconductor lasers

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; HEAT RESISTANCE; HETEROJUNCTIONS; MIRRORS; OPTICAL DESIGN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031153805     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640644     Document Type: Article

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