Near ultraviolet optically pumped vertical cavity laser

Electronics Letters

Volumn 36, Issue 21, 2000, Pages 1777-1779

  Zhou, Hailong ^a   Diagne, M ^a   Makarona, E ^a   Nurmikko, A V ^a   Han, J ^b   Waldrip, K E ^b   Figiel, J J ^b  

^a Brown University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MIRRORS; MORPHOLOGY; OPTICAL RESONATORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BRAGG REFLECTORS; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034297231     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001257     Document Type: Article

References (6)

1. SOMEYA, T., WERNER, R., FORCHEL, A., CATALANO, M., CINGOLANI, R., and ARAKAWA, Y.: 'Room temperature lasing at blue wavelengths in gallium nitride microcavities', Science, 1999, 285, pp. 1905-1906
2. KRESTNIKOV, I.L., LUNDIN, W.V., SAKHAROV, A.V., SEMENOV, V.A., USIKOV, A.S., TSATSUL'NIKOV, A.F., ALFEROV, ZH.I., LEDENTSOV, N.N., HOFFMANN, A., and BIMBERG, D.: 'Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser', Appl. Phys. Lett., 1999, 75, pp. 1192-1194
3. SONG, Y.-K., NURMIKKO, A.V., SCHNEIDER, R.P., KUO, C.P., KRAMES, M.R., KERN, R.S., CARTER-COMAN, C., and KISH, F.A.: 'A quasi-continuous wave, optically pumped violet vertical cavity surface emitting laser', Appl. Phys. Lett., 2000, 76, pp. 1662-1664
4. WALDRIP, K.E., HAN, J., FIGIEL, J.J., ZHOU, H., DIAGNE, M., and NURMIKKO, A.V.: 'Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors', submitted to Appl. Phys. Lett.,
5. NG, H.M., MOUSTAKAS, T.D., and CHU, S.N.G.: 'High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy', Appl. Phys. Lett., 2000, 76, pp. 2818-2820
6. HAN, J., NG, T.-B., BIEFELD, R.M., CRAWFORD, M.H., and FOLLSTAEDT, D.M.: 'The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition', Appl. Phys. Lett., 1997, 71, pp. 3114-3116