Impact of planar microcavity effects on light extraction - Part II: Selected exact simulations and role of photon recycling

IEEE Journal of Quantum Electronics

Volumn 34, Issue 9, 1998, Pages 1632-1643

  Benisty, H ^a   De Neve, H ^b   Weisbuch, C ^a  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

Cavities; Distributed feedback devices; Fabry Perot resonators; Light sources; Light emitting diodes; Microravities; Semiconductor device modeling

Indexed keywords

CAVITY RESONATORS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; LIGHT EMITTING DIODES; MONOCHROMATORS; MULTILAYERS; OPTICAL RESONATORS; OPTIMIZATION; PHOTONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

FABRY-PEROT RESONATORS; LIGHT EXTRACTION; PHOTON RECYCLING; PLANAR MICROCAVITY EFFECTS;

LIGHT EMISSION;

EID: 0032166999     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.709579     Document Type: Article

References (55)

1. H. Benisty, H. De Neve, and C. Weisbuch. "Impact of planar microcavity effects on light extraction - Part I: Basic concepts and analytical trends," this issue, pp 1612-1631
2. G. B. Stringfellow and M. G. Carford, Eds., High-Brightness Light-Emitting Diodes. San Diego, CA: Academic, 1997.
3. M. G. Craford, "Overview of device issues in high-brightness light-emitting diodes," in High-Brightness Light-Emitting Diodes. G. B. Stringfellow and M. G. Craford. Eds. San Diego, CA: Academic, 1997, pp. 47-64.
4. W. Lukosz. "Theory of optical-environment-dependent spontaneousemission rates for emitters in thin layers." Phys. Rev. B. vol. 22, pp. 3030-3038, 1980.
5. _. "Light emission by magnetic and electric dipoles close to a plane dielectric interface. III. Radiation patterns of dipoles with arbitrary orientation." J. Opt. Soc. Amer., vol. 69. pp. 1495-1503, 1979.
6. G. W. Ford and W. H. Weber. "Electromagnetic interaction of molecules with metal surfaces." Phys. Rep., vol. 113, pp. 195-287, 1984.
7. H. Benisty, M. Mayer, and R. Stanley, "A method of source terms for dipole emission modification in modes of arbitrary planar structures." J. Opt. Soc. Amer. A. vol. 15. pp. 1192-1201, 1998
8. H. De Neve, J. Blondelle, R. Baets, P. Demeester, P. Vandaele. and G. Borghs. "High efficiency planar microcavity LEDs: Comparison of design and experiments." IEEE Photon. Terhnol. Lett., vol. 7, pp. 287-289, 1995.
9. J. Blondelle. H. De Neve, P Demeester, P. Vandaele, G. Borghs. and R. Baets. "16% external quantum efficiency from planar microcavity LED's al 940 nm by precise matching of cavity wavelength." Electrom. Lett., vol. 31. pp. 1286-1287, 1995.
10. 1-xAs," Appl. Phys. Lett., vol. 55, pp 165-167, 1989.
11. T. Nishikawa, M. Yokota, S. Nakamura, Y. Kadoya, M. Yamanishi, and I. Ogura. "Influence of photon reabsorption on the transfer efficiency of output intensity in semiconductor microcavities," IEEE Photon. Technol. Lett vol 9. pp. 179-181, 1997.
12. T. Nisihikawa, T. Kakimura, Y. Lee, and M. Yamanishi. "Enhanced transfer efficiency in AlGaAs asymmetric planar microcavities." Appl. Phys. Lett., vol. 65, pp. 1796-1798, 1994.
13. H. De Neve, J. Blondelle, P. Vandale, P. Demeester, R. Baets, and G. Borghs. "Recycling of guided mode light emission in planar microcavity light emitting diods." Appl. Phys, vol. 70. pp 799-801. 1997.
14. I. Schnitzer, E. Yablonvitch, C. Caneau. and T. J. Gmitter, "Ultrahigh spontanious emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures,". Appl. Phys. Lett., vol. 62. pp. 131-133, 1993.
15. S. Adachi,. "GaAs. AlAs and GaAlAs: Material properties for use in research and device applications," J. Appl. Phys., Vol. 58, pp. R1-R29, 1985.
16. L. A. Coldern and S. W. Scorzinne, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
17. C. H. Henry, L. F. Johnson, R. A. Logan, and P. D. Clarke, "Determination of the refractive index of InGaAsP eptaxial layers by made line luinescence spectroscopy," IEEE J. Quantum Electron., vol. QE-21, pp. 1887-1892, 1985.
18. T. L. Koch and U. Koren, "Photonic intergrated circuits," in Intergrated Optoelectronicsm, M. Dagenais, R. F. Leheny, and J. Crow. Eds. San Diego. CA: Academic, 1995, pp. 557-626.
19. F. M. Steranka, "AIGaAs red light-emitting diodes in high-brightness light-emitting diodes, G. B. Stringfellow and M. G. Craford, Eds., Semiconducters and Semimetals. San Diego, CA: Academic, 1997 pp. 65-96.
20. H. C. Casey and M. B. Panish, Heterostrucure Lasers. Vol A and B. New York: Academic, 1978
21. S. N. Mohomad, A. A. Salvador, and H. Morkoç, "Emerging gallium nitride base devices," Proc IEEE vol, 83. pp. 1305-1355, 1995.
22. H. Morko, S. Strite, G. B. Gao, M. E. Lin B. Sverldov, and M. Burns, "Large-band-gap SiC III-V nitride and II-VI ZnSe-based semiconductor device technologies." J. Appl. Phys., vol. 76, pp. 1363-1398, 1994.
23. S. Nakamura, "III-V nitiride based light-emitting devices," Solid Slate Commun., vol. 102, pp. 237-248, 1997.
24. _. "Grovp III-V nitride-based ultraviolet blue-green-yellow light-emitting diodes and laser diodes," in High-Brightness Light-Emitting Diodes, G. B. Stringfellow and M. G. Carford, Eds. San Diego. CA: Academic, 1997, pp. 391-443.
25. M. Koike, S. Yamasaki, S. Nagai, N Koide, and S. Asami, "High-quality GalnN GaN multiple quantum wells," Appl. Phys Lett., vol. 68, pp. 1403-1405, 1996.
26. M. A. Vidal, G. Ramirez-Flores. H. Navarro-Contreras, A. LastrasMartinez, R. C. Powell, and J. E. Greene. "Retractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV)," Appl. Phys. Lett., vol. 68, pp. 441-443, 1996.
27. 0.5p/GaP light-emitting diodes." Appl. Phys. Lett., vol. 64, pp. 2839-2841, 1994.
28. F. A. Kish and R. M. Fletcher. "AlGalnP light-emitting diodes," in High-Brightness Light-Emitting Diodes, G. B. Stringfellow and M. G. Carford, Eds. San Diego, CA: Academic, 1997, pp. 149-226.
29. G. E.Höfler, D. A. Vanderwater, D. C. DeFever, F. A. Kish, M. D. Camras, F. M. Stranka, and I. H. Tan "Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers," Appl. Phys. Lett., vol. 69, pp. 803-805, 1996.
30. A. Salokatve, A. Salokatve, K. Rakennus, P. Uusimaa, M. Pessa, T. Aherne, J. P. Doran, J. O'Gorman, and J. Hegarty. "Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributred Bragg reflector," Appl. Phys. Lett, vol. 67, pp 407-409, 1995.
31. Y.-H. Wu "Structure-dependent thresold current density for CdZnSe- Y.-H. II-VI semicondutor lasers," IEEE J. Quantum Electrom, vol. 30, pp. 1562-1573, 1994.
32. C. Brys, F. Vermaerke, P. Demeester, P. V. Dale, K. Rakennous, A. Salokatve, P, Uusima, M. Pessa, A. L. Bradley, J. P. Doran, J. O'Gorman, and J. Hegarty, "Epitaxial lift-off of ZnSe base II-VI structures," Appl. Phys. Lett., vol. 66, pp. 1086-1088, 1995.
33. A. Tsujimura, S. Yoshi, S. Hayashi, K. Ohkawa, and T. Mitsuyu, "Cavity parameters of ZnCdSe/ZnSe single-quantem-well separate-confiment-heterostructure laser diodes" Jpn. J Appl. Phys., vol. 32, pp L1750-L175Z, 1993.
34. D. G. Deppe and C. Lei, "Spontaneous emmision from a dippole in a semicondutor microcavity," J. Appl. Phys, vol. 70, pp. 3443-3448. 1991.
35. D. Björk, S. Machida, Y. Yamamoto, and K. Igeta, "Modification of spontaneous emission, rate in planar dielectric microcavity structures," Phys. Rev. A, Vol. 44, pp. 669-681. 1991.
36. N. E. J. Hunt, N. E. J. Hunt, E. F. Schubert, D. L. Sivco, A. Y. Cho, R. F. Kopf. R. A. Logan, and g. J. Zydzik, "High efficency, narrow spectrum resonant-cavity light-emitting diodes," in Confined Electrons and Photons, E. Burstein and C. Weisbuch, Eds. New York: Plenum, 1995. pp 703-714.
37. R. R Chance, A. Prock, and R. Silbey, "Flurescence and energy trasfer near interfaces," in Advances in Chemical Physics, I. Prigogine and S.A. Rice, Eds, New York: Wiley, 1978, pp. 1-65.
38. M. G. Craford, "Commercial light emitting diode technology: Status, trends and possible future performances," in Microacavities and photonic B Bandsgaps: Physis and Application, J. Rarity and C. Weisbuch, Eds. Dordrecht, The Netherlands: Kluwer, NATO ASI Series, 1996, pp. 323-332.
39. S. T. Ho, D. Y. Chu, J.-P. Zhang, S. Wu, and M. Chin, "Dielectric photonic wells and wires and spontaneous coupling effiency of microdisk and photonic-wire semiconductor lasers in optical process in m microcavities," R. K. Chang and A. J. Campillo, Eds., Advanced Series in Applied Physics. Singapore: World Scientific, 1996, pp. 339-388.
40. P. Wittke, "Spontaneous emmission rate alternation by dieletric and other wavegiuding Structures," RCA Rev., vol. 36, pp. 655-660, 1975.
41. S. T. Ho, S, L. Mc Call, and R. E. Slusher, "Spontaneous emmision from excitions in thin dielectric layers," Opt. Lett., vol 18, pp 909-911, 1993.
42. J. Blondelle, H. De Neve, P. Demeester, P. Vandaele, G. Borghs, and R. Baets, "6-percent external quantum effiency from InGaAs/(A1)GaAs single-quantum-well planar microcavity LED's," Electron, Lett., 30, pp. 1787-1788, 1994.
43. J. Blondelle, H. De Neve, G. Borghs, P. Vandaele, P. Demeester, and R. Beats, "High effiency (>20%) microcavity LED's," in IEE Colloquium on Semiconductor Optical Microcavity Devices and Photomic Bandgaps, London, U.K., 1996.
44. J. Blondelle, "Realization of high-efficiency substrate-emitting In-GaAs/(A1)GaAs microcavity LED's by means of MOCD," Ph.D. dissertation, University of Gent, Belgium, 1997.
45. H. De Neve, J. Blondelle, P. Vandaele, P. Demeester, R. Baets, and G. Borghs, "Planner substrate-emmiting microcavity light emitting diodes with 20% external QE," presented at SPIE Photonics West, San Jose, CA, 1997.
46. H. De. Neve, "Study and realiazation of microcavity based LED's," Ph.D. dissertation, University of Gent, Belgium, 1997.
47. A. Kastler, "Atomes à l'intérieur d'un interféromètre Perot-Fabry," Appl. Opt., vol. 1, pp. 17-24, 1962.
48. E. U. Condon and H. Odishaw, Eds., American Institute of Physics Handbook. New York: McGraw-Hill, 1967.
49. R. L. Moon. "MOVPE: Is there any technology for optelectronics?," J. Cryst. Growth, vol. 170, pp. 1-10, 1997.
50. J. Bleuse, E. Hadli, N. Magnea, and J.-L. Pautrat, "II-VI resonant cavity light emitting diodes for the mid-infrad," in Microcavities and Photonic Bandgaps, J. Rarity and C. Weisbuch, Eds. Dordrecht, The Netherlands: Kluwer, NATO ASI Series, 1996, pp. 353-362.
51. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures Les Ulis, France: Les Editions de Physique, 1990.
52. 2 microcavities," in Confined Electrons and Photons, E. Burstein and C. Weisbuch, Eds. New York: P Plenum Press, 1995, pp. 703-714.
53. N. E. J. Hunt, E. F. Schubert, R. A. Logan, and G. J. Zydzik, "Enhanced spectral power densty and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant cavity light-emitting diode," Appl. Phys Lett., vol. 61. pp. 2287-2289, 1992.
54. K. Neyts, "Cavity effects in thin flim phosphors based on ZnS," in Microcavities and Photonic Bandgaps: Physis and Applications, J. Rarity and C. Weisbuch. Eds Dordrecht The Netherlands Kluwer, NATO ASI Series, 1996, pp. 397-106.
55. E. F. Schubert, N. E. J. Hunt, R. J. Malik, M. Micovic, and D. L. Miller, "Temperature and Modulation characteristics of resonent-cavity light-emitting diodes," J. Lightwave Technol., vol. 14.pp. 1721-1728. 1996.