Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1370-1372

  Cho, H K ^a   Lee, J Y ^a   Yang, G M ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALUMINUM COMPOSITION; ELASTIC MISFIT; III-NITRIDE; III-NITRIDES; INGAN/GAN; INITIAL STAGES; INVERSION DOMAINS; LARGE LATTICE MISMATCH; PIT FORMATION; STACKING MISMATCH BOUNDARIES; SURFACE UNDULATION; THREADING DISLOCATION; THREE-DIMENSIONAL ISLAND GROWTH; V-DEFECTS;

ALUMINUM; GALLIUM NITRIDE; INDIUM; LATTICE MISMATCH; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 79956035306     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1454215     Document Type: Article

References (15)

1. H. Morkoç, Nitride Semiconductors and Devices (Springer, Heidelberg, 1999).
2. S. Nakamura, Science 281, 956 (1998). sci SCIEAS 0036-8075
3. H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. J. Humphreys, J. Cryst. Growth 231, 466 (2001). jcr JCRGAE 0022-0248
4. P. Desjardins, H. Marchand, L. Isnard, and R. A. Masut, J. Appl. Phys. 81, 3501 (1997). jap JAPIAU 0021-8979
5. M. Mitsuhara, M. Ogasawara, and H. Sugiura, J. Cryst. Growth 210, 463 (2000). jcr JCRGAE 0022-0248
6. J. M. Hartmann, B. Gallas, J. Zhang, and J. J. Harris, Semicond. Sci. Technol. 15, 370 (2000). sst SSTEET 0268-1242
7. H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, Appl. Phys. Lett. 79, 215 (2001). apl APPLAB 0003-6951
8. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, Appl. Phys. Lett. 72, 692 (1998). apl APPLAB 0003-6951
9. G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, and I. Akasaki, J. Appl. Phys. 88, 2677 (2000). jap JAPIAU 0021-8979
10. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 32, 265 (1976). jcr JCRGAE 0022-0248
11. C. J. Sun, M. Z. Anwar, Q. Chen, J. W. Yang, M. A. Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Xiang, Appl. Phys. Lett. 70, 2978 (1997). apl APPLAB 0003-6951
12. Z. Liliental-Weber, M. Benamara, J. Washburn, J. Z. Domagala, J. Bak-Misiuk, E. L. Piner, J. C. Roberts, and S. M. Bedair, J. Electron. Mater. 30, 439 (2001). jem JECMA5 0361-5235
13. K. Lorenz, M. Gonsalves, Wook Kim, V. Narayanan, and S. Mahajan, Appl. Phys. Lett. 77, 3391 (2000). apl APPLAB 0003-6951
14. L. T. Romano, M. Kneissl, J. E. Northrup, C. G.. Van de Walle, and D. W. Treat, Appl. Phys. Lett. 79, 2734 (2001). apl APPLAB 0003-6951
15. H. K. Cho, J. Y. Lee, S. R. Jeon, and G. M. Yang, Appl. Phys. Lett. 79, 3788 (2001). apl APPLAB 0003-6951