Lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 PART A, 1998, Pages

  Someya, Takao ^a   Tachibana, Koichi ^a   Lee, Jungkeun ^b   Kamiya, Takeshi ^b   Arakawa, Yasuhiko ^a,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaN; InGaN; MOCVD; Photoluminescence; Vertical cavity surface emitting laser

Indexed keywords

ELECTRON BEAMS; EVAPORATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; REFLECTIVE COATINGS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SILICA; STIMULATED EMISSION; TITANIUM DIOXIDE;

ALUMINUM GALLIUM NITRIDE; ELECTRON BEAM EVAPORATION; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; LASING EMISSION; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032290310     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1424     Document Type: Article

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