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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 381-385

Growth and characterization of AlInN on AlN template

(7) Fujimori, Takao a Imai, Hitoshi a Wakahara, Akihiro a Okada, Hiroshi a Yoshida, Akira a Shibata, Tomohiko b Tanaka, Mitsuhiro b

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

b NGK INSULATORS LTD (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Alloys; B1. Nitrides; B2. Semiconducting aluminum compounds; B2. Semiconducting III V materials; B2. Semiconducting indium compounds

Indexed keywords

ALUMINUM NITRIDE; BAND STRUCTURE; CATHODOLUMINESCENCE; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

GAS PHASE RATIO; PHOTON-ENERGY; SEMICONDUCTING III-V MATERIALS; TRANSITION BAND STRUCTURE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 9944226612 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.077 Document Type: Conference Paper

Times cited : (33)

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