InAlN-barrier HFETs with GaN and InGaN channels

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 7, 2009, Pages 1385-1395

  Liberis, J ^a   Matulioniene, I ^a   Matulionis, A ^a   Sermuksnis, E ^a   Xie, J ^b   Leach, J H ^b   Morkoc, H ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; ELECTRON VELOCITY; EXPERIMENTAL OBSERVATION; HIGH ELECTRIC FIELDS; HOT PHONONS; LO-PHONON-PLASMON; PHONON DECAY; PHONON LIFETIMES; PHONON MODE; POWER DISSIPATION; POWER LEVELS; THERMAL BATH; ULTRAFAST DECAY;

ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PHONONS; PLASMONS; SEMICONDUCTING GALLIUM; TRANSPORT PROPERTIES;

HOT ELECTRONS;

EID: 67650458486     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200824287     Document Type: Article

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