GaN-based two-dimensional channels: Hot-electron fluctuations and dissipation

Journal of Physics Condensed Matter

Volumn 21, Issue 17, 2009, Pages

  Matulionis, A ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/ALN/GAN; ALGAN/GAN; ELECTRIC POWER; ELECTRON ENERGIES; ELECTRON FLUCTUATIONS; EXPERIMENTAL DATUM; EXPERIMENTAL INVESTIGATIONS; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HOT PHONONS; HOT-PHONON EFFECTS; INTER-SUBBAND ABSORPTIONS; NON-EQUILIBRIUM LONGITUDINAL OPTICAL PHONONS; ON-ELECTRON DENSITIES; PHONON LIFETIMES; PHONON MODES; PHONON NUMBERS; PHOTON SCATTERINGS; POWER DISSIPATIONS; TWO-DIMENSIONAL CHANNELS; ULTRA FASTS;

CHANNEL FLOW; ELECTRON TEMPERATURE; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MULTIPHOTON PROCESSES; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL;

PHONONS;

EID: 65449160522     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/17/174203     Document Type: Article

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