Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor

IEEE Transactions on Electron Devices

Volumn 52, Issue 2, 2005, Pages 146-150

  Katz, Oded ^a   Mistele, David ^a   Meyler, Boris ^a   Bahir, Gad ^a   Salzman, Joseph ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

GaN; High electron mobility transistor (HEMT), InAIN; Piezoelectricity; Polarity; Transistor

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

POLARITY; POLARIZATION INDUCED CHARGES; SEMICONDUCTING INDIUM ALUMINUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 13344287010     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.841281     Document Type: Article

References (14)

1. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol. 87, pp. 334-344, Jan. 2000.
2. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, "Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors," Appl. Phys. Lett., vol. 71, pp. 2794-2796, Nov. 1997.
3. S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 465-471, Mar. 2001.
4. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48. no. 3, pp. 560-566, Mar. 2001.
5. O. Katz, G. Bahir, and J. Salzman, "Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors," Appl. Phys. Lett. vol. 84, pp. 4092-4094, May 2004.
6. O. Katz, D. Mistele, A. Horn, G. Bahir, and J. Salzman, "The dynamics of persistent photo-effects in AlGaN/GaN based HFET," presented at the Int. Workshop on Nitride Semiconductors, Pittsburgh, PA, 2004.
7. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors," Appl. Phys. Lett., vol. 77, pp. 250-252, Jul. 2000.
8. O. Katz, A. Horn, G. Bahir, and J. Salzman, "Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility," IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2002-2008, Oct. 2003.
9. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reuche, and K. H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes," Nature, vol. 406, p. 865, 2000.
10. C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, M. A. Khan, H.-P. Maruska, D. W. Hill, M. M. C. Chou, and B. Chai, "GaN homoepitaxy on freestanding (1100) oriented GaN substrates," Appl. Phys. Lett., vol. 81, pp. 3194-3196, Oct. 2002.
11. J. Kuzmik, "Power electronics on InAlN/(In)GaN: Prospect for record performance," IEEE Electron Device Lett., vol. 22, no. 11, pp. 510-512, Nov. 2001.
12. M. Higashiwaki and T. Matsui, "MBE growth and device characteristics of InAlN/GaN HFETs," presented at the Int. Workshop on Nitride Semiconductors, Pittsburgh, PA, 2004.
13. A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, "Indium nitride (InN): A review on growth, characterization, and properties," J. Appl. Phys. vol. 94, pp. 2779-2808, Sep. 2003.
14. A. Dadgar, M. Neuburger, J. Blaesing, E. Kohn, and A. Krost, "InAlN/GaN field-effect transistors," presented at the Int. Workshop on Nitride Semiconductors, Pittsburgh, PA, 2004.