Hot-phonon-induced velocity saturation in GaN

Journal of Applied Physics

Volumn 96, Issue 3, 2004, Pages 1499-1502

  Ridley, B K ^a,b   Schaff, W J ^a   Eastman, L F ^a  

^a Cornell University   (United States)

^b UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY RELAXATION RATE; HETROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); HOT-PHONON-INDUCED-VELOCITY; LONGITUDINAL OPTICAL (LO) MODES;

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ERROR ANALYSIS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHONONS; SUPERSATURATION; VECTORS; VELOCITY MEASUREMENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4043172846     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1762999     Document Type: Article

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