AlGaN/InGaN HEMTs for RF current collapse suppression

Electronics Letters

Volumn 40, Issue 12, 2004, Pages 771-772

  Lanford, W ^a   Kumar, V ^a   Schwindt, R ^a   Kuliev, A ^a   Adesida, I ^a   Dabiran, A M ^b   Wowchak, A M ^b   Chow, P P ^b   Lee, J W ^c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b SVT ASSOCIATES   (United States)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

CARRIER CONFINEMENT; COLLAPSE SUPPRESSION; CURRENT COLLAPSE; DRAIN CURRENTS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 3042638789     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040398     Document Type: Article

References (11)

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