Fluctuations and ultrafast processes in voltage-biased two-dimensional channels

International Journal of High Speed Electronics and Systems

Volumn 18, Issue 4, 2008, Pages 923-933

  Matulionis, Arvydas ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

AlGaAs GaAs; AlGaN AlN GaN; AlGaN GaN; AlInAs GaInAs AlInAs InP; Energy relaxation; Fluctuations; Hot electrons; Hot phonons; Real space transfer; Two dimensional electron gas channels

Indexed keywords

ATOMS; DISSOCIATION; ELECTRIC CONDUCTIVITY OF GASES; ELECTRON GAS; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PHONONS; POWER ELECTRONICS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

ALGAAS/GAAS; ALGAN/ALN/GAN; ALGAN/GAN; ALINAS/GAINAS/ALINAS/ INP; ENERGY RELAXATION; FLUCTUATIONS; HOT PHONONS; REAL-SPACE TRANSFER; TWO-DIMENSIONAL ELECTRON GAS CHANNELS;

HOT ELECTRONS;

EID: 60749126620     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156408005886     Document Type: Article

References (34)

1. H. B. Callen and T. A. Welton, Irreversibility and generalized noise, Phys. Rev. 83(1), 34-40 (1951).
2. M. Oestreich, M. Römer, R. J. Haug, D. Hägele, Spin noise spectroscopy in GaAs, Phys. Rev. Letters 95(21), 216603-1-4 (2005).
3. M. Römer, J. Hübner, M. Oestreich, Spin noise spectroscopy in semiconductors, Rev. Sci. Instrum. 78(10), 103903-1-6 (2007).
4. T. Musha, G. Borbely, M. Shoji, 1/f phonon-number fluctuations in quartz observed by laser light scattering, Phys. Rev. Letters 64(20), 2394-2397 (1990).
5. V. Bareikis, R. Katilius, J. Pozhela, S. Gantsevich, and V. Gurevich, Fluctuation spectroscopy of hot electrons in semiconductors, in Spectroscopy of Nonequilibrium Electrons and Phonons, eds. C. V. Shank and B. P. Zakharchenya (Modern Problems in Condensed Matter Sciences Vol. 35, North-Holland, Amsterdam, 1992), p. 327396.
6. H. L. Hartnagel, R, Katilius, and A. Matulionis, Microwave Noise in Semiconductor Devices (Wiley, New York, 2001).
7. H. Morkoç, Handbook of Nitride Semiconductors and Devices (Springer, Berlin, 2008).
8. A. Matulionis, I. Matulionienė, Hot-electron noise in III-V semiconductor structures for ultrafast devices, in Noise and Fluctuations Control in Electronic Devices, ed. A. A. Balandin (American Scientific Publishers, Stevenson Ranch, 2002), p. 249266.
9. 1-xN/GaN channel estimated from noise analysis, Phys. Rev. B 68(3), 035338-1-7 (2003).
10. A. Matulionis, J. Liberis, L. Ardaravičius, M. Ramonas, I. Matulionienė, J. Smart, Hotelectron energy relaxation time in AlGaN/GaN, Semicond. Sci. Technol. 17(3), L9-L14 (2002).
11. E. Šermukšnis, J. Liberis, and A. Matulionis, Microwave noise technique for measurement of hot-electron energy relaxation time and hot-phonon lifetime, Lithuanian J. Phys. 47(4), 491-498 (2007).
12. A. Matulionis and J. Liberis, Microwave noise in AlGaN/GaN channels, IEE Proc.-Circuits Devices Syst. 151(2), 148-154 (2004).
13. L. Ardaravičius and J. Liberis, Anisotropy of hot-electron noise in InAlAs/InGaAs/InAlAs quantum wells, Lithuanian J. Phys. 40(5), 357-363 (2000).
14. A. Matulionis, V. Aninkevičius, J. Liberis, I. Matulionienė, J. Berntgen, K. Heime, and H. L. Hartnagel, Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels, Appl. Phys. Lett. 74(13), 1895-1897 (1999).
15. V. Aninkevičius, V. Bareikis, J. Liberis, A. Matulionis, and P. S. Kop'ev, Real-space-transfer noise and diffusion in GaAs/AlGaAs heterostructure, in Proc. 11th Int. Conf. Noise in Physical Systems and 1/f Fluctuations, eds. T. Musha, S. Sato, and M. Yamamoto, Kyoto, Japan, 24-27 Nov. 1991 (Ohmsha, Tokyo, 1991), p. 183186.
16. V. Aninkevičius, V. Bareikis, R. Katilius, P. S. Kop'ev, M. R. Leys, J. Liberis, and A. Matulionis, Hot electron noise and diffusion in AlGaAs/GaAs, Semicond. Sci. Technol. 9(5S), 576-579 (1994).
17. V. Aninkevičius, V. Bareikis, R. Katilius, J. Liberis, I. Matulionienė, A. Matulionis, P. S. Kop'ev, and V. M. Ustinov, Transverse tunnelling time constant estimated from hotelectron noise in GaAs-based heterostructure, Solid State Commun. 98(11), 991-995 (1996).
18. M. Ramonas, A. Matulionis, J. Liberis, L. Eastman, X. Chen, and Y.-J. Sun, Hot-phonon effect on power dissipation in a biased AlGaN/AlN/GaN channel, Phys. Rev. B 71(7), 075324-1-8 (2005).
19. V. Aninkevičius, A. Matulionis, and I. Matulionienė, Hot-phonon lifetime in a modulationdoped AlInAs/GalnAs/AlInAs/InP, Semicond. Sci. Technol. 20(2), 109-114 (2005).
20. A. Matulionis, J. Liberis, M. Ramonas, I. Matulionienė, L. Eastman, A. Vertiatchikh, X. Chen, and Y.-J. Sun, Hot-electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs, Physica Status Solidi (c) 2(7), 2585-2588 (2005).
21. A. Matulionis, R. Katilius, J. Liberis, L. Ardaravičius, L.F. Eastman, J. R. Shealy, and J. Smart, Hot-electron temperature relaxation time in a 2-DEG: AlGaN/GaN at 80 K, J. Appl. Phys. 92(8), 4490-4497 (2002).
22. A. Matulionis, J. Liberis, L. Ardaravičius, J. Smart, D. Pavlidis, S. Hubbard, and L. F. Eastman, Hot-phonon limited electron energy relaxation in AIN/GaN, Intern. J. High Speed Electronics and Systems 12(2-3), 459-468 (2002).
23. X. L. Lei, and N. J. M. Horing, Thermal-noise temperature of GaAs heterosystems for steadystate hot-electron transport with nonequilibrium phonons, Phys. Rev. B 36(8), 4238-4248 (1987).
24. A. Matulionis, J. Liberis, and M. Ramonas, Microwave noise in biased AlGaN/GaN and AlGaN/AlN/GaN channels, in Proc. 18th Int. Conf. on Noise and Fluctuations 'ICNF 2005' Salamanca, Spain, 19-23 Sept. 2005, eds. T. González, J. Mateos, D. Pardo (AIP Conf. Proc. Vol. CP780, New York, 2005), p. 105108.
25. S. Wu, P. Geiser, J. Jun, J. Karpinski, D. Wang, R. Sobolewski, Time-resolved intervalley transitions in GaN single crystals, J. Appl. Phys. 101(4), 043701-1-6 (2007).
26. T. Zubkutė and A. Matulionis, Hot-electron energy dissipation and interelectron collisions in GaN-WZ, Semicond. Sci. and Technol 17(11), 1144-1148 (2002).
27. A. Matulionis, V. Aninkevicius, and J. Liberis, Hot-electron velocity fluctuations in 2-DEG channels, Microelectronics Reliability 40(11), 1803-1814 (2000).
28. A. Matulionis, Hot phonons in GaN channels for HEMTs, Physica Status Solidi (a) 203(10), 2313-2325 (2006).
29. J. W. Pomeroy, M. Kuball, M. J. Uren, and T. Martin, Direct optical measurement of hotphonons in active AlGaN/GaN devices, physica status solidi (b) 245(5) (Published online 11 Apr.) (2008).
30. Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W. J. Schaff, and L. F. Eastman, Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures, Phys. Rev. Lett. 94(3), 037403-1-3 (2005).
31. st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007)}, eds. G. Meneghesso, M. Meneghini, and D. Vogrig, Venice, Italy, 20-23 May 2007 (University of Padova, Padova, Italy, 2007), p. 225-228.
32. K. T. Tsen, J. G. Kiang, D. K. Ferry, and H. Morkoç, Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density, Appl. Phys. Lett. 89(11), 112111-1-3(2006).
33. A. Matulionis, Drift velocity limitation in GaN HEMT channels, Intern. J. High Speed Electronics and Systems 17(1), 15-18 (2007).
34. A. Matulionis, J. Liberis, L. Ardaravičius, L. F. Eastman, J. R. Shealy, and A. Vertiatchikh, Hot-phonon lifetime in AlGaN/GaN at high lattice temperatures, Semicond. Sci. and Technol. 19(4), S421-423 (2004).