Development of high-frequency GaN HFETs for millimeter-wave applications

IEICE Transactions on Electronics

Volumn E91-C, Issue 7, 2008, Pages 984-988

  Higashiwakf, Masataka ^a,c   Mimura, Takashi ^b   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c Santa Barbara   (United States)

Author keywords

GaN; Heterostructure field effect transistors (HFETs); Millimeter wave

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; CUTOFF FREQUENCY; DRAIN CURRENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVES; SILICON NITRIDE; TITANIUM;

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; CATALYTIC CHEMICAL VAPOR DEPOSITION; CURRENT GAIN CUTOFF FREQUENCY; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HIGH FREQUENCY DEVICES; MAXIMUM OSCILLATION FREQUENCY; MAXIMUM TRANSCONDUCTANCE; MILLIMETER-WAVE APPLICATIONS;

FIELD EFFECT TRANSISTORS;

EID: 65349133280     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.7.984     Document Type: Article

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