Structural characterization of Al1-xInxN lattice-matched to GaN

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 419-423

  Kariya, Michihiko ^a   Nitta, Shugo ^a   Yamaguchi, Shigeo ^a   Kashima, Takayuki ^a   Kato, Hisaki ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDE; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0034140029     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00583-7     Document Type: Article

References (11)

1. Akasaki I., Sota S., Sakai H., Tanaka T., Koike M., Amano H. Electron. Lett. 32:1996;1105.
2. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y. Jpn. J. Appl. Phys. 35:1996;L74.
3. Takeuchi T., Takeuchi H., Sota S., Sakai H., Amano H., Akasaki I. Jpn. J. Appl. Phys. 36:1997;L177.
4. Takeuchi T., Sota S., Katsuragawa M., Komori M., Takeuchi H., Amano H., Akasaki I. Jpn. J. Appl. Phys. 36:1997;L382.
5. Starosta K. Phys. Stat. Sol. (a) 68:1981;K55.
6. Kubota K., Kobayashi Y., Fujimoto K. J. Appl. Phys. 66:1989;2984.
7. Guo Q.X., Ogawa H., Yoshida A. J. Cryst. Growth. 146:1995;462.
8. Guo Q.X., Itoh N., Ogawa H., Yoshida A. Jpn. J. Appl. Phys. 34:1995;4653.
9. Kim K.S., Saxler A., Kung P., Razaghi M., Lim K.Y. Appl. Phys. Lett. 71:1997;800.
10. Peng T., Piprek J., Qiu G., Olowoiafe J.O., Unruh K.M., Swann C.P., Shubert E.F. Appl. Phys. Lett. 71:1997;2439.
11. Kariya M., Nitta S., Yamaguchi S., Amano H., Akasaki I. Jpn. J. Appl. Phys. 38:1999;L984.