Defect formation during hetero-epitaxial growth of aluminum nitride thin films on 6H-silicon carbide by gas-source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1641-1647

  Tanaka, Satoru ^a,c   Kern, R Scott ^a   Bentley, James ^b   Davis, Robert F ^a  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Aluminum nitride; Defect formation mechanisms; Dislocations; Silicon carbide; Thin film; Transmission electron microscopy

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE; ATOMISTIC STRUCTURAL MODELS; DEFECT FORMATION; DENSITY OF DEFECTS; GAS SOURCE MOLECULAR BEAM EPITAXY; THREADING DISLOCATIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030101622     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1641     Document Type: Article

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