Optimization of the GaN-buffer growth on 6H-SiC (0001)

Thin Solid Films

Volumn 289, Issue 1-2, 1996, Pages 256-260

  Byun, Dongjin ^a   Kim, Gyeungho ^a   Lim, Dongsup ^b   Lee, Dokyol ^b   Choi, In Hoon ^b   Park, Dalkeun ^a   Kum, Dong Wha ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Atomic force microscopy; Chemical vapour deposition; Gallium nitride; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; FREE ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SPECTROSCOPY; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; GALLIUM NITRIDE; HALL MEASUREMENT; PHOTOLUMINESCENCE SPECTRA;

FILM GROWTH;

EID: 0030284419     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08999-7     Document Type: Article

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