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Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10205-10212

Structure and optoelectronic properties of dislocations in GaN

(1) Cherns, D a

a UNIVERSITY OF BRISTOL (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); FILM GROWTH; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDES; THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034516668 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/12/49/320 Document Type: Article

Times cited : (30)

References (17)

1
- 0029637531
- Lester S D, Ponce F A, Craford M G and Steigerwald D A 1995 Appl. Phys. Lett. 66 1249
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1249
- Lester, S.D.¹ Ponce, F.A.² Craford, M.G.³ Steigerwald, D.A.⁴

2
- 4243656631
- Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H and Akasaki I 1997 Japan. J. Appl. Phys. 36 L74
- (1997) Japan. J. Appl. Phys. , vol.36
- Takeuchi, T.¹ Sota, S.² Katsuragawa, M.³ Komori, M.⁴ Takeuchi, H.⁵ Amano, H.⁶ Akasaki, I.⁷

3
- 0031348864
- Im J S, Kollmer H, Off J, Sohmer A, Scholtz F and Hangleiter A 1998 MRS Proc. 482 513
- (1998) MRS Proc. , vol.482 , pp. 513
- Im, J.S.¹ Kollmer, H.² Off, J.³ Sohmer, A.⁴ Scholtz, F.⁵ Hangleiter, A.⁶

4
- 0033284754
- Cherns D, Barnard J and Mokhtari H 1999 Mater. Sci. Eng. B 66 33
- (1999) Mater. Sci. Eng. B , vol.66 , pp. 33
- Cherns, D.¹ Barnard, J.² Mokhtari, H.³

5
- 0000991291
- Ponce F A, Cherns D, Young W T and Steeds J W 1996 Appl. Phys. Lett. 69 770
- (1996) Appl. Phys. Lett. , vol.69 , pp. 770
- Ponce, F.A.¹ Cherns, D.² Young, W.T.³ Steeds, J.W.⁴

6
- 0342749575
- ed H Calderon Benavides and M Jose Yacaman (Bristol: Institute of Physics)
- Cherns D 1998 Proc. Int. Congr. on Electron Microscopy (Cancun 1998) vol 3, ed H Calderon Benavides and M Jose Yacaman (Bristol: Institute of Physics) p 385
- (1998) Proc. Int. Congr. on Electron Microscopy (Cancun 1998) , vol.3 , pp. 385
- Cherns, D.¹

7
- 0031150313
- Cherns D, Young W T, Steeds J W, Ponce F A and Nakamura S 1997 J. Cryst. Growth 178 201
- (1997) J. Cryst. Growth , vol.178 , pp. 201
- Cherns, D.¹ Young, W.T.² Steeds, J.W.³ Ponce, F.A.⁴ Nakamura, S.⁵

8
- 0000433335
- Frank F C 1951 Acta Crystallgr. 4 497
- (1951) Acta Crystallgr. , vol.4 , pp. 497
- Frank, F.C.¹

9
- 0034013839
- Liliental-Weber Z 2000 J. Electron Microsc. 49 339
- (2000) J. Electron Microsc. , vol.49 , pp. 339
- Liliental-Weber, Z.¹

10
- 0000247290
- ed F R N Nabarro (Amsterdam: North Holland)
- Matthews J W 1979 Dislocations in Solids vol 2, ed F R N Nabarro (Amsterdam: North Holland) p 461
- (1979) Dislocations in Solids , vol.2 , pp. 461
- Matthews, J.W.¹

11
- 84996158322
- Jesser W A and Matthews J W 1967 Phil. Mag. 15 1097
- (1967) Phil. Mag. , vol.15 , pp. 1097
- Jesser, W.A.¹ Matthews, J.W.²

12
- 0343184235
- in preparation
- Liliental-Weber Z et al in preparation
- Liliental-Weber, Z.¹

13
- 0343184234
- in preparation
- Evans O et al in preparation
- Evans, O.¹

14
- 0038269509
- Rosner S J, Carr E C, Ludowise M J, Girolami G and Erikson H I 1997 Appl. Phys. Lett. 70 420
- (1997) Appl. Phys. Lett. , vol.70 , pp. 420
- Rosner, S.J.¹ Carr, E.C.² Ludowise, M.J.³ Girolami, G.⁴ Erikson, H.I.⁵

15
- 85042807979
- Sugahara T et al 1998 Japan J. Appl. Phys. Lett. 37 L398
- (1998) Japan J. Appl. Phys. Lett. , vol.37
- Sugahara, T.¹

16
- 0342749573
- Bewick A, Henley S J and Cherns D Proc. EMAG 99
- Proc. EMAG 99
- Bewick, A.¹ Henley, S.J.² Cherns, D.³

17
- 0343184229
- at press
- Henley S J, Cherns D, Bewick A and Ponce F A 2000 Proc. EGW 2000 (Nottingham, 2000) J. Cryst. Growth at press
- (2000) Proc. EGW 2000 (Nottingham, 2000) J. Cryst. Growth
- Henley, S.J.¹ Cherns, D.² Bewick, A.³ Ponce, F.A.⁴

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