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Materials Chemistry and Physics

Volumn 117, Issue 1, 2009, Pages 321-325

Barrier layer and annealing temperature dependent microstructure evolution of nanocrystalline Cu films

(3) Cao, Z H a Lu, H M a Meng, X K a

a NANJING UNIVERSITY (China)

Author keywords

Barrier layer; Cu; Microstructure; Nanocrystalline

Indexed keywords

ANNEALING TEMPERATURES; AS ANNEALING; AVERAGE DIAMETER; BARRIER LAYER; BARRIER LAYERS; CU; CU FILMS; ELECTRICAL RESISTIVITY MEASUREMENTS; GRAIN SIZE; GRAIN-BOUNDARY DIFFUSION; MICROSTRUCTURE EVOLUTIONS; NANOCRYSTALLINE; NANOCRYSTALLINE CU; SCANNING ELECTRON MICROSCOPES; SEM OBSERVATION; TEXTURE VARIATION; TRANSMISSION ELECTRON MICROSCOPE;

ACTIVATION ENERGY; ANNEALING; COPPER; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; METALLIC FILMS; MICROSCOPES; SCANNING ELECTRON MICROSCOPY; TANTALUM; TEXTURES; TRANSMISSION ELECTRON MICROSCOPY;

NANOCRYSTALLINE MATERIALS;

EID: 67650069248 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/j.matchemphys.2009.06.018 Document Type: Article

Times cited : (14)

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