Atomic scale observation of corner-voiding effects in advanced interconnects

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Guedj, C ^a   Barnes, J P ^a   Papon, A M ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; GRADIENT METHODS; GRAIN BOUNDARIES; MOTION CONTROL; STRAIN CONTROL; TENSILE STRESS;

ATOMIC SCALE DESCRIPTIONS; DOWNSCALING DEVELOPMENTS; STRAIN GRADIENTS;

COPPER;

EID: 33751113539     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2372690     Document Type: Article

References (24)

1. International Technology Roadmap for Semiconductors, 2004, http://www.itrs.net/
2. P. Børgesen, J. K. Lee, R. Gleixner, and C.-Y. Li, Appl. Phys. Lett. 60, 1706 (1992).
3. J. A. Nucci, Y. Shacham-Diamond, and J. E. Sanchez, Jr., Appl. Phys. Lett. 66, 3585 (1995).
4. J. A. Nucci, R. R. Keller, J. E. Sanchez, Jr., and Y. Shacham-Diamond, Appl. Phys. Lett. 69, 4017 (1996).
5. R. R. Keller, J. A. Nucci, and D. P. Field, J. Electron. Mater. 26, 996 (1997).
6. A. Sekiguchi, J. Koike, S. Kamiya, M. Saka, and K. Maruyama, Appl. Phys. Lett. 79, 1264 (2001).
7. E. T. Ogawa, J. W. McPherson, J. A. Rosal, K. J. Dickerson, T.-C. Chiu, L. Y. Tsung, M. K. Jain, T. D. Bonifield, J. C. Ondrusek, and W. R. McKee, Proceedings of IEEE International Reliability Physics Symposium, 2002 (unpublished), p. 312.
8. Y. K. Lim, Y. H. Lim, C. S. Seet, B. C. Zhang, K. L. Chok, K. H. See, T. J. Lee, L. C. Hsia, and K. L. Pey, Proceedings of IEEE International Reliability Physics Symposium, 2004 (unpublished), p. 240.
9. M. A. Korhonen, C. A. Pasziet, and C.-Y. Li, J. Appl. Phys. 69, 8083 (1991).
10. M. A. Korhonen, W. R. LaFontaine, P. Børgesen, and C.-Y. Li, J. Appl. Phys. 70, 6774 (1991).
11. A. Sekiguchi, J. Koike, S. Kamiya, M. Saka, and K. Maruyama, Appl. Phys. Lett. 79, 9 (2001).
12. V. Arnal, R. J. O. M. Hoofman, M. Assous, P. H. L. Bancken, M. Broekaart, P. Brun, N. Casanova, L. L. Chapelon, T. Chevolleau, C. Cowache, R. Daamen, A. Farcy, M. Fayolle, H. Feldis, Y. Furakawa, C. Goldberg, L. G. Gosset, C. Guedj, K. Haxaire, O. Hinsinger, E. Josse, S. Jullian, O. Louveau, J. Michelon, N. Posseme, M. Rivoire, A. Roman, T. Vandeweyer, G. J. A. M. Verheijden, and J. Torres, Proceedings of IITC 2004, San Francisco, 2004, p. 202.
13. P. Motte, M. Proust, J. Torres, Y. Gobil, Y. Morand, J. Palleau, R. Pantel, and M. Juhel, Microelectron. Eng. 50, 369 (2000).
14. S. Orain, J.-C. Barb́, X. Federspliel, P. Legallo, and H. Jaouen, Proceedings of ESIM Conference, 2004 (unpublished).
15. C. Guedj, N. Claret, V. Arnal, M. Aimadeddine, J. P. Barnes, J. C. Barbe, L. Arnaud, G. Reimbold, J. Torres, G. Passemard, and F. Boulanger, Proceedings of IEEE International Reliability Physics Symposium (IRPS), 2006 (unpublished).
16. A. Sekiguchi, J. Koike, and K. Maruyama, Appl. Phys. Lett. 83, 1962 (2003).
17. A. Blech, J. Appl. Phys. 47, 1203 (1976).
18. T. Zhu, J. Li, and S. Yip, Phys. Rev. Lett. 93, 025503 (2004).
19. W.-J. Lee, Y.-S. Lee, S.-K. Rha, Y.-J. Lee, K.-Y. Lim, Y.-D. Chung, and C.-N. Whang, Appl. Surf. Sci. 205, 128 (2003).
20. K. Y. Lim, Y. S. Lee, Y. D. Chung, I. W. Lyo, C. N. Whang, J. Y. Won, and H. J. Kang, Appl. Phys. A: Mater. Sci. Process. 70, 431 (2000).
21. C. S. Kwon, D. J. Kim, and Y. T. Kim, Mater. Res. Soc. Symp. Proc. 355, 441 (1995).
22. JCPDS Card No. 4-836 (unpublished); JCPDS Card NO. 38-1420 (unpublished).
23. JCPDS Card No. 4-836 (unpublished); JCPDS Card NO. 38-1420 (unpublished).
24. Kazuhide Abe, Yusuke Harada, and Hiroshi Onoda, J. Vac. Sci. Technol. B 17, 1464 (1999).