Effect of density on the diffusion barrier property of TiNx films between Cu and Si

Materials Chemistry and Physics

Volumn 85, Issue 2-3, 2004, Pages 444-449

  Lee, Wen Horng ^a   Kuo, Yu Lin ^b   Huang, Hong Ji ^b   Lee, Chiapyng ^b  

^a LEE MING INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Bias voltage; Diffusion barrier; Film density; Titanium nitride

Indexed keywords

ANNEALING; COPPER; DENSITY (SPECIFIC GRAVITY); DIFFUSION; GRAIN BOUNDARIES; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; THERMAL EFFECTS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BIAS VOLTAGES; DIFFUSION BARRIERS; FAILURE MECHANISM; FILM DENSITY;

METALLIC FILMS;

EID: 1942516270     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2004.02.001     Document Type: Article

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