Barrier layer, geometry and alloying effects on the microstructure and texture of electroplated copper thin films and damascene lines

Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 63-70

  Muppidi, T ^a   Field, D P ^a   Sanchez Jr , J E ^b   Woo, C ^c  

^a Washington State University   (United States)

^b Unity Semiconductor   (United States)

^c ADVANCED MICRO DEVICES   (United States)

Author keywords

Copper; Crystallographic texture; Electron backscatter diffraction (EBSD); Metallization

Indexed keywords

ALLOYING; BACKSCATTERING; COPPER; CRYSTAL MICROSTRUCTURE; CRYSTALLOGRAPHY; ELECTROMIGRATION; ELECTRON DIFFRACTION; ELECTROPLATING; GRAIN SIZE AND SHAPE; METALLIZING; SPUTTERING; TANTALUM; TWINNING; X RAY DIFFRACTION ANALYSIS;

BARRIER LAYERS; CRYSTALLOGRAPHIC TEXTURE; ELECTRON BACKSCATTERING DIFFRACTION (EBSD);

THIN FILMS;

EID: 10644258078     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.057     Document Type: Article

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