Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects

Applied Physics Letters

Volumn 90, Issue 19, 2007, Pages

  Chang, C W ^a   Thompson, C V ^a,b   Gan, C L ^a,c   Pey, K L ^a,d   Choi, W K ^a,e   Lim, Y K ^f  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^f CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DAMASCENE; ELECTROMIGRATION RELIABILITY; LINEWIDTH DEPENDENCE; MICROVOIDS;

ELECTRIC CONNECTORS; ELECTROMIGRATION; NUCLEATION;

COPPER;

EID: 34248390120     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2714315     Document Type: Article

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