HfO2 bipolar resistive memory device with robust endurance using AlCu as electrode

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 146-147

  Lee, Heng Yuan ^a,c   Chen, Pang Shiu ^b   Wu, Tai Yuan ^a   Wang, Ching Chiun ^a   Tzeng, Pei Jer ^a   Lin, Cha Hsin ^a   Chen, Frederick ^a   Lien, Chen Hsin ^c   Tsai, Ming Jinn ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b Department of Materials Science and Engineering

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49049105664     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530839     Document Type: Conference Paper

References (5)

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2. C. Ho et al. Symposium VLSI Tech. Dig., p228, 2007.
3. A. Chen et al., IEDM Tech. Dig., p746, 2005.
4. B.J. Choi et al., J. Appl. Phys., 98, 033715, 2005
5. M.A. Lampert et al, Academic press, 1970.