Atomic vapor deposition of titanium nitride as metal electrodes for gate-last CMOS and MIM devices

Chemical Vapor Deposition

Volumn 14, Issue 5-6, 2008, Pages 123-128

  Lukosius, Mindaugas ^a   Wenger, Christian ^a   Pasko, Sergej ^b   Müssig, Hans Joachim ^a   Seitzinger, Bernhard ^b   Lohe, Christoph ^b  

^a IHP   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

AVD; Resistivity; TiN; Titanium nitride; Work function

Indexed keywords

ATOMIC PHYSICS; ATOMS; ELECTRIC PROPERTIES; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; NITRIDES; PROBABILITY DENSITY FUNCTION; SILICON COMPOUNDS; SMELTING; TIN; TITANIUM; TITANIUM COMPOUNDS; TRANSISTORS; VAPOR DEPOSITION; VAPORS; WORK FUNCTION;

ATOMIC VAPOR DEPOSITIONS; AVD; ELECTRICAL PROPERTIES; METAL ELECTRODES; METAL GATES; PMOS TRANSISTORS; PMOSFET; RESISTIVITY; TIN FILMS; TIN LAYERS;

TITANIUM NITRIDE;

EID: 54949084977     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200806695     Document Type: Article

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