SCOPUS 정보 검색 플랫폼

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 11, 2007, Pages 4139-4142

Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory

(4) Park, In Sung a Lee, Joo Ho a Lee, Sunwoo a Ahn, Jinho a

a Hanyang University (South Korea)

Author keywords

Atomic layer deposition; Metal electrode; Resistance change random access memory; Resistance switching effect

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRODES; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; RESISTORS; SWITCHING;

ANNEALING TEMPERATURES; HIGH-RESISTANCE STATE; METAL ELECTRODES; METAL INSULATOR METALS; RESISTANCE CHANGE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RESISTANCE SWITCHING BEHAVIORS; RESISTANCE SWITCHING EFFECT;

RANDOM ACCESS STORAGE;

HAFNIUM;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; DATA STORAGE DEVICE; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; MICROELECTRODE; NANOTECHNOLOGY; SIGNAL PROCESSING;

COMPUTER STORAGE DEVICES; ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; HAFNIUM; MEMBRANES, ARTIFICIAL; MICROELECTRODES; NANOTECHNOLOGY; SIGNAL PROCESSING, COMPUTER-ASSISTED;

EID: 38449118732 PISSN: 15334880 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (9)

References (17)

1
- 0000748226
- S. Q. Lui, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).
- (2000) Appl. Phys. Lett , vol.76 , pp. 2749
- Lui, S.Q.¹ Wu, N.J.² Ignatiev, A.³

2
- 0001331485
- A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
- (2000) Appl. Phys. Lett , vol.77 , pp. 139
- Beck, A.¹ Bednorz, J.G.² Gerber, C.³ Rossel, C.⁴ Widmer, D.⁵

3
- 23944447615
- B. J. Choi, D. S. Jeong, S. K. Kim, S. Choi, J. H. Oh, C. Rohde, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715 (2005).
- (2005) J. Appl. Phys , vol.98 , pp. 033715
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Choi, S.⁴ Oh, J.H.⁵ Rohde, C.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

4
- 19944434155
- S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. 85, 5655 (2004).
- (2004) Appl. Phys. Lett , vol.85 , pp. 5655
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.-S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Hwang, I.R.⁸ Kim, S.H.⁹ Byun, I.S.¹⁰ Kim, J.-S.¹¹ Choi, J.S.¹² Park, B.H.¹³

5
- 33846342615
- S
- K.-R. Kim, I.-S. Park, J. P. Hong, S. S. Lee, B. L. Choi, and J. Ahn, J. Korean Phys. Soc. 49, S548 (2006).
- (2006) J. Korean Phys. Soc , vol.49 , pp. 548
- Kim, K.-R.¹ Park, I.-S.² Hong, J.P.³ Lee, S.S.⁴ Choi, B.L.⁵ Ahn, J.⁶

6
- 0035872897
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89. 5243 (2001).
- (2001) J. Appl. Phys , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

7
- 0042842595
- H. Hu, C. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev, J. Appl. Phys. 94, 551 (2003).
- (2003) J. Appl. Phys , vol.94 , pp. 551
- Hu, H.¹ Zhu, C.² Lu, Y.F.³ Wu, Y.H.⁴ Liew, T.⁵ Li, M.F.⁶ Cho, B.J.⁷ Choi, W.K.⁸ Yakovlev, N.⁹

8
- 21744439705
- J. Tsaur, K. Onodera, T. Kobayashi, Z.-J. Wang, S. Heisig, R. Maeda. and T. Suga, Sens. Actuators A 121, 275 (2005).
- (2005) Sens. Actuators A , vol.121 , pp. 275
- Tsaur, J.¹ Onodera, K.² Kobayashi, T.³ Wang, Z.-J.⁴ Heisig, S.⁵ Maeda, R.⁶ Suga, T.⁷

9
- 34547890352
- I.-S. Park, K.-R. Kim, S. Lee, and J. Ahn, Jpn. J. Appl. Phys. 46, 2172 (2007).
- (2007) Jpn. J. Appl. Phys , vol.46 , pp. 2172
- Park, I.-S.¹ Kim, K.-R.² Lee, S.³ Ahn, J.⁴

10
- 0042378349
- A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Y. Sun, Y. Y. Xue, and C. W. Chu, Appl. Phys. Lett. 83, 957 (2003).
- (2003) Appl. Phys. Lett , vol.83 , pp. 957
- Baikalov, A.¹ Wang, Y.Q.² Shen, B.³ Lorenz, B.⁴ Tsui, S.⁵ Sun, Y.Y.⁶ Xue, Y.Y.⁷ Chu, C.W.⁸

11
- 10044237971
- A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85. 4073 (2004).
- (2004) Appl. Phys. Lett , vol.85 , pp. 4073
- Sawa, A.¹ Fujii, T.² Kawasaki, M.³ Tokura, Y.⁴

12
- 31144461698
- M. J. Rozenberg, I. H. Inoue, and M. J. Sanchez, Appl. Phys. Lett. 88,033510(2006).
- (2006) Appl. Phys. Lett , vol.88 , pp. 033510
- Rozenberg, M.J.¹ Inoue, I.H.² Sanchez, M.J.³

13
- 29744470409
- S. Seo, M. J. Lee, D. C. Kim, S. E. Ahn, B.-H. Park, Y S. Kim. I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, J.-S. Kim, J. S. Choi. J. H. Lee, S. H. Jeon, S. H. Hong, and B. H. Park, Appl. Phys. Lett. 87, 263507 (2005).
- (2005) Appl. Phys. Lett , vol.87 , pp. 263507
- Seo, S.¹ Lee, M.J.² Kim, D.C.³ Ahn, S.E.⁴ Park, B.-H.⁵ Kim, Y.S.⁶ Yoo, I.K.⁷ Byun, I.S.⁸ Hwang, I.R.⁹ Kim, S.H.¹⁰ Kim, J.-S.¹¹ Choi, J.S.¹² Lee, J.H.¹³ Jeon, S.H.¹⁴ Hong, S.H.¹⁵ Park, B.H.¹⁶

14
- 0017556846
- H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977).
- (1977) J. Appl. Phys , vol.48 , pp. 4729
- Michaelson, H.B.¹

15
- 4344623534
- Y.-C. Yeo, Thin Solid Films 462-463, 34 (2004).
- (2004) Thin Solid Films , vol.462-463 , pp. 34
- Yeo, Y.-C.¹

16
- 20144384988
- N. Terasawa, K. Akimoto, Y. Mizuno, A. Ichimiya, K. Sumitani, T. Takahashi, X. W. Zhang, H. Sugiyama, H. Kawata, T. Nabatame. and A. Toriumi, Appl. Surf. Sci. 244, 16 (2005).
- (2005) Appl. Surf. Sci , vol.244 , pp. 16
- Terasawa, N.¹ Akimoto, K.² Mizuno, Y.³ Ichimiya, A.⁴ Sumitani, K.⁵ Takahashi, T.⁶ Zhang, X.W.⁷ Sugiyama, H.⁸ Kawata, H.⁹ Nabatame, T.¹⁰ Toriumi, A.¹¹

17
- 31144449823
- J.-W. Park, J.-W. Park, D.-Y. Kim, and J.-K. Lee, J. Vac. Sci. Technol. A 23, 1309 (2005).
- (2005) J. Vac. Sci. Technol. A , vol.23 , pp. 1309
- Park, J.-W.¹ Park, J.-W.² Kim, D.-Y.³ Lee, J.-K.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.