Soft breakdown conduction in ultrathin (35 nm) gate dielectrics

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 82-89

  Miranda, Enrique ^a   Suné, Jordi ^a   Rodriguez, Rosana ^a   Nafria, Montserrat ^b   Aymerich, Xavier ^b   Fonseca, Luis ^b   Campabadal, Francesca ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

Author keywords

Charge injection; Dielectric breakdown; Leakage currents; Mos devices

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

CHARGE INJECTION; DIELECTRIC BREAKDOWN; GATE DIELECTRICS; SOFT BREAKDOWN CONDUCTION;

ULTRATHIN FILMS;

EID: 0033880145     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817571     Document Type: Article

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