Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices

Microelectronic Engineering

Volumn 85, Issue 8, 2008, Pages 1762-1765

  Wenger, Ch ^a   Lukosius, M ^a   Costina, I ^a   Sorge, R ^a   Dabrowski, J ^a   Mussig H J ^a   Pasko, S ^b   Lohe, Ch ^b  

^a IHP   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

AVD; Gate last; HfO2; High k; TiN

Indexed keywords

HAFNIUM COMPOUNDS;

EID: 48949116042     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.05.002     Document Type: Article

References (24)

1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association (SIA), .
2. Bohr M.T., Chau R.S., Ghani T., and Mistry K. IEEE Spectrum October (2007) 29
3. Laikhtman B., and Solomon P.M. J. Appl. Phys. 103 (2008) 014501
4. Ohshita Y., Ogura A., Ishikawa M., Kada T., Hoshino A., Suzuki T., Machida H., and Soai K. Chem. Vapor. Depos. 12 (2006) 130
5. Milanov A., Thomas R., Hellwig M., Merz K., Becker H.-W., Ehrhart P., Fischer R.A., Waser R., and Devi A. Surf. Coat. Tech. 201 (2007) 9109
6. Horii S., Yamamoto K., Asai M., Miya H., and Niwa M. Jpn. J. Appl. Phys. 42 (2003) 5176
7. Lee S., and Kwong D.-L. Jpn. J. Appl. Phys. 43 (2004) 427
8. Ho M.-T., Wang Y., Brewer R.T., Wielunski L.S., Chabal Y.J., Moumen N., and Boleslawski M. Appl. Phys. Lett. 87 (2005) 133103
9. Baldovino S., Spiga S., Scarel G., and Fanciulli M. Appl. Phys. Lett. 91 (2007) 172905
10. Weber U., Schumacher M., Lindner J., Boissiere O., Lehnen P., Miedl S., Barbar G., Lohe C., and McEntee T. Microelectron. Reliab. 5 (2005) 945
11. Lucovsky G., Hinkle C.L., Fulton C.C., Stoute N.A., Seo H., and Lüning J. Radiat. Phys. Chem. 75 (2006) 2097
12. Kamiyama S., Miura T., and Nara Y. Appl. Phys. Lett. 87 (2005) 132904
13. Ohshita Y., Ogura A., Hoshino A., Hiiro S., Suzuki T., and Machida H. Thin Solid Films 406 (2002) 215
14. Thomas R., Rije E., Ehrhart P., Milanov A., Bhakta R., Baunemann A., Devi A., Fischer R.A., and Waser R. J. Electrochem. Soc. 154 (2007) G77
15. Yamamoto K., Hayashi S., Kubota M., and Miwa M. Appl. Phys. Lett. 81 (2002) 2053
16. Depas M., Vermeire B., Mertens P.W., Van Meirhaeghe R.L., and Heyns M.M. Solid-State Electron. 38 (1995) 1465
17. Fillot F., Morel T., Minoret S., Matko I., Maitrejean S., Guillaumot B., Chenevier B., and Billon T. Microelectron. Eng. 82 (2005) 248
18. Wilk G.D., et al. VLSI Tec. Dig. Tec. Pap. (2002) 88
19. Gavartin J.L., Shluger A.L., Foster A.S., and Bersurker G.I. J. Appl. Phys. 97 (2005) 053704
20. Chang-Liao K.-S., and Chen L.-C. J. Vac. Sci. Technol., B 15 (1997) 942
21. Ohzone T., Michii A., and Hori T. Solid-State Electron. 38 (1995) 1165
22. Sucio P.I., and Johnston R.L. IEEE Trans. Electron. Dev. 27 (1980) 1846
23. Weber O., Andrieu F., Cassé M., Ernst T., Mitard J., Ducroquet F., Damlencourt J.-F., Hartmann J.-M., Lafond D., Papon A.-M., Militaru L., Thevenod L., Romanjek K., Leroux C., Martin F., Guillaumot B., Ghibaudo G., and Deleonibus S. IEDM Tech. Dig. (2004) 437
24. Chen K., Wann H.C., Ko P.K., and Hu C. IEEE Electron. Dev. Lett. 17 (1996) 202