-
1
-
-
0023421147
-
"Threshold Properties of 1, 2, and 4 mm Multilayer Magneto-Resistive Memory Cells"
-
A. V. Pohm, C. S. Comstock, J. Y. Yoo, and J. H. Hur, "Threshold Properties of 1, 2, and 4 mm Multilayer Magneto-Resistive Memory Cells," IEEE Trans. Magn. 23, No. 5, 2575-2577 (1987).
-
(1987)
IEEE Trans. Magn.
, vol.23
, Issue.5
, pp. 2575-2577
-
-
Pohm, A.V.1
Comstock, C.S.2
Yoo, J.Y.3
Hur, J.H.4
-
2
-
-
32944474988
-
"Magnetic Thin Film RAM Devices"
-
(Warren E. Henry Symposium on Magnetism), Springer-Verlag, New York
-
J. M. Daughton, "Magnetic Thin Film RAM Devices," Lecture Notes in Physics 337 (Warren E. Henry Symposium on Magnetism), Springer-Verlag, New York, 1988, pp. 9101-9116.
-
(1988)
Lecture Notes in Physics
, vol.337
, pp. 9101-9116
-
-
Daughton, J.M.1
-
3
-
-
0024112069
-
"The Design of a One Megabit Nonvolatile M-R Memory Chip Using 1.5×1.5 mm Cells"
-
A. V. Pohm, J. S. T. Huang, J. M. Daughton, D. R. Krahn, and V. Mehra, "The Design of a One Megabit Nonvolatile M-R Memory Chip Using 1.5×1.5 mm Cells," IEEE Trans. Magn. 24, No. 6, 3117-3119 (1988).
-
(1988)
IEEE Trans. Magn.
, vol.24
, Issue.6
, pp. 3117-3119
-
-
Pohm, A.V.1
Huang, J.S.T.2
Daughton, J.M.3
Krahn, D.R.4
Mehra, V.5
-
4
-
-
33750860386
-
"Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices"
-
M. Baibich, J. Broto, A. Fert, F. v. Dau, F. Petroff, P. Etienne, G. Greuzet, A. Friederich, and J. Chazelas, "Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices," Phys. Rev. Lett. 61, 2472 (1988).
-
(1988)
Phys. Rev. Lett.
, vol.61
, pp. 2472
-
-
Baibich, M.1
Broto, J.2
Fert, A.3
Dau, F.V.4
Petroff, F.5
Etienne, P.6
Greuzet, G.7
Friederich, A.8
Chazelas, J.9
-
5
-
-
4243497370
-
"Enhanced Magnetoresistance in Layered Magnetic Structures with Antiferromagnetic Interlayer Exchange"
-
G. Binash, P. Grunberg, F. Saurenbach, and W. Zinn, "Enhanced Magnetoresistance in Layered Magnetic Structures with Antiferromagnetic Interlayer Exchange," Phys. Rev. B 39, 4828 (1989).
-
(1989)
Phys. Rev. B
, vol.39
, pp. 4828
-
-
Binash, G.1
Grunberg, P.2
Saurenbach, F.3
Zinn, W.4
-
6
-
-
11944269751
-
"Oscillations in Exchange Coupling and Magnetoresistance in Metallic Superlattice Structures: Co/Ru, Co/Cr, and Fe/Cr"
-
S. S. P. Parkin, N. More, and K. P. Roche, "Oscillations in Exchange Coupling and Magnetoresistance in Metallic Superlattice Structures: Co/ Ru, Co/Cr, and Fe/Cr," Phys. Rev. Lett. 64, 2304 (1990).
-
(1990)
Phys. Rev. Lett.
, vol.64
, pp. 2304
-
-
Parkin, S.S.P.1
More, N.2
Roche, K.P.3
-
7
-
-
26144471857
-
"Giant Magnetoresistance in Antiferromagnetic Co/Cu Multilayers"
-
S. S. P. Parkin, Z. G. Li, and D. J. Smith, "Giant Magnetoresistance in Antiferromagnetic Co/Cu Multilayers," Appl. Phys. Lett. 58, 2710 (1991);
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 2710
-
-
Parkin, S.S.P.1
Li, Z.G.2
Smith, D.J.3
-
8
-
-
4243154767
-
"Oscillatory Magnetic Exchange Coupling Through Thin Copper Layers"
-
S. S. P. Parkin, R. Bhadra, and K. P. Roche, "Oscillatory Magnetic Exchange Coupling Through Thin Copper Layers," Phys. Rev. Lett. 66, 2152 (1991).
-
(1991)
Phys. Rev. Lett.
, vol.66
, pp. 2152
-
-
Parkin, S.S.P.1
Bhadra, R.2
Roche, K.P.3
-
9
-
-
3643058592
-
"Systematic Variation of the Strength and Oscillation Period of Indirect Magnetic Exchange Coupling Through the 3d, 4d, and 5d Transition Metals"
-
S. S. P. Parkin, "Systematic Variation of the Strength and Oscillation Period of Indirect Magnetic Exchange Coupling Through the 3d, 4d, and 5d Transition Metals," Phys. Rev. Lett. 67, 3598 (1991).
-
(1991)
Phys. Rev. Lett.
, vol.67
, pp. 3598
-
-
Parkin, S.S.P.1
-
10
-
-
36449006004
-
19/Cu by Addition of Thin Co Interface Layers"
-
19/Cu by Addition of Thin Co Interface Layers," Appl. Phys. Lett. 61, 1358 (1992);
-
(1992)
Appl. Phys. Lett.
, vol.61
, pp. 1358
-
-
Parkin, S.S.P.1
-
11
-
-
4244077002
-
"Origin of Enhanced Magnetoresistance of Magnetic Multilayers: Spin-Dependent Scattering from Magnetic Interface States"
-
S. S. P. Parkin, "Origin of Enhanced Magnetoresistance of Magnetic Multilayers: Spin-Dependent Scattering from Magnetic Interface States," Phys. Rev. Lett. 71, 1641 (1993).
-
(1993)
Phys. Rev. Lett.
, vol.71
, pp. 1641
-
-
Parkin, S.S.P.1
-
12
-
-
30244560850
-
"Giant Magnetoresistance in Soft Ferromagnetic Multilayers"
-
B. Dieny, V. S. Speriosu, S. S. P. Parkin, and B. A. Gurney, "Giant Magnetoresistance in Soft Ferromagnetic Multilayers," Phys. Rev. B 43, 1297 (1991).
-
(1991)
Phys. Rev. B
, vol.43
, pp. 1297
-
-
Dieny, B.1
Speriosu, V.S.2
Parkin, S.S.P.3
Gurney, B.A.4
-
13
-
-
27944447363
-
"Spin-Dependent Sensors"
-
J. Daughton, "Spin-Dependent Sensors," Proc. IEEE 91, 681 (2003).
-
(2003)
Proc. IEEE
, vol.91
, pp. 681
-
-
Daughton, J.1
-
14
-
-
33646767097
-
"Magnetically Engineered Spintronic Sensors and Memory"
-
S. S. P. Parkin, X. Jiang, C. Kaiser, A. Panchula, K. Roche, and M. Samant, "Magnetically Engineered Spintronic Sensors and Memory," Proc. IEEE 91, 661 (2003).
-
(2003)
Proc. IEEE
, vol.91
, pp. 661
-
-
Parkin, S.S.P.1
Jiang, X.2
Kaiser, C.3
Panchula, A.4
Roche, K.5
Samant, M.6
-
15
-
-
0034260706
-
"Spintronics: A New Paradigm for Electronics for the New Millennium"
-
S. Wolf and D. Treger, "Spintronics: A New Paradigm for Electronics for the New Millennium," IEEE Trans. Magn. 36, 2748 (2000).
-
(2000)
IEEE Trans. Magn.
, vol.36
, pp. 2748
-
-
Wolf, S.1
Treger, D.2
-
16
-
-
0001397726
-
"Conductance and Exchange Coupling of Two Ferromagnets Separated by a Tunnel Barrier"
-
J. C. Slonczewski, "Conductance and Exchange Coupling of Two Ferromagnets Separated by a Tunnel Barrier," Phys. Rev. B 39, 6995 (1989).
-
(1989)
Phys. Rev. B
, vol.39
, pp. 6995
-
-
Slonczewski, J.C.1
-
17
-
-
32944481005
-
"Development of the Magnetic Tunnel Junction MRAM at IBM: From First Junctions to a 16-Mb MRAM Demonstrator Chip"
-
For more on the origins of the magnetic tunnel junction, see also (this issue)
-
For more on the origins of the magnetic tunnel junction, see also W. J. Gallagher and S. S. P. Parkin, "Development of the Magnetic Tunnel Junction MRAM at IBM: From First Junctions to a 16-Mb MRAM Demonstrator Chip," IBM J. Res.&Dev. 50, No. 1, 5-23 (2006, this issue).
-
(2006)
IBM J. Res. & Dev.
, vol.50
, Issue.1
, pp. 5-23
-
-
Gallagher, W.J.1
Parkin, S.S.P.2
-
18
-
-
11944262717
-
"Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions"
-
J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, "Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions," Phys. Rev. Lett. 74, 3273 (1995).
-
(1995)
Phys. Rev. Lett.
, vol.74
, pp. 3273
-
-
Moodera, J.S.1
Kinder, L.R.2
Wong, T.M.3
Meservey, R.4
-
20
-
-
17644447010
-
"A 0.18 μm 4Mb Toggling MRAM"
-
M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B. N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N. D. Rizzo, T. Rodriguez, L. Savtchenko, J. Salter, J. M. Slaughter, K. Smith, J. J. Sun, M. Lien, K. Papworth, P. Shah, W. Qin, R. Williams, L. Wise, and S. Tehrani, "A 0.18 μm 4Mb Toggling MRAM," IEDM Tech. Digest, 2003, pp. 34.6.1-34.6.3.
-
(2003)
IEDM Tech. Digest
-
-
Durlam, M.1
Addie, D.2
Akerman, J.3
Butcher, B.4
Brown, P.5
Chan, J.6
DeHerrera, M.7
Engel, B.N.8
Feil, B.9
Grynkewich, G.10
Janesky, J.11
Johnson, M.12
Kyler, K.13
Molla, J.14
Martin, J.15
Nagel, K.16
Ren, J.17
Rizzo, N.D.18
Rodriguez, T.19
Savtchenko, L.20
Salter, J.21
Slaughter, J.M.22
Smith, K.23
Sun, J.J.24
Lien, M.25
Papworth, K.26
Shah, P.27
Qin, W.28
Williams, R.29
Wise, L.30
Tehrani, S.31
more..
-
21
-
-
85039343190
-
-
See
-
See http://www.hitachigst.com/hdd/technolo/overview/chart02.html.
-
-
-
-
22
-
-
85039344400
-
-
May special issue on spintronics technology
-
Proc. IEEE 91, No. 5, May 2003; special issue on spintronics technology.
-
(2003)
Proc. IEEE
, vol.91
, Issue.5
-
-
-
23
-
-
19944431328
-
"A 4-Mbit Toggle MRAM Based on a Novel Bit and Switching Method";
-
B. N. Engel, J. Åkerman, B. Butcher, R. W. Dave, M. DeHerrera, M. Durlam, G. Grynkewich, J. Janesky, S. V. Pietambaram, N. D. Rizzo, J. M. Slaughter, K. Smith, J. J. Sun, and S. Tehrani, "A 4-Mbit Toggle MRAM Based on a Novel Bit and Switching Method," IEEE Trans. Magn. 41, 132-136 (2005).
-
(2005)
IEEE Trans. Magn.
, vol.41
, pp. 132-136
-
-
Engel, B.N.1
Åkerman, J.2
Butcher, B.3
Dave, R.W.4
DeHerrera, M.5
Durlam, M.6
Grynkewich, G.7
Janesky, J.8
Pietambaram, S.V.9
Rizzo, N.D.10
Slaughter, J.M.11
Smith, K.12
Sun, J.J.13
Tehrani, S.14
-
24
-
-
4544312036
-
"A 16Mb MRAM Featuring Bootstrapped Write Drivers"
-
(IEEE Cat. No. 04CH37525)
-
J. DeBrosse, C. Arndt, C. Barwin, A. Bette, D. Gogl, E. Gow, H. Hoenigschmid, S. Lammers, M. Lamorey, Y. Lu, T. Maffitt, K. Maloney, W. Obermeyer, A. Sturm, H. Viehmann, D. Willmott, M. Wood, W. J. Gallagher, G. Mueller, and A. R. Sitaram, "A 16Mb MRAM Featuring Bootstrapped Write Drivers," Digest of Technical Papers, Symposium on VLSI Circuits (IEEE Cat. No. 04CH37525), 2004, pp. 454-457.
-
(2004)
Digest of Technical Papers, Symposium on VLSI Circuits
, pp. 454-457
-
-
DeBrosse, J.1
Arndt, C.2
Barwin, C.3
Bette, A.4
Gogl, D.5
Gow, E.6
Hoenigschmid, H.7
Lammers, S.8
Lamorey, M.9
Lu, Y.10
Maffitt, T.11
Maloney, K.12
Obermeyer, W.13
Sturm, A.14
Viehmann, H.15
Willmott, D.16
Wood, M.17
Gallagher, W.J.18
Mueller, G.19
Sitaram, A.R.20
more..
-
25
-
-
0034430270
-
"A 10 ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell"
-
(IEEE Cat. No. 00CH37056)
-
R. Scheuerlein, W. Gallagher, S. Parkin, A. Lee, S. Ray, R. Robertazzi, and W. Reohr, "A 10 ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell," Digest of Technical Papers, IEEE International Solid-State Circuits Conference (IEEE Cat. No. 00CH37056), 2000, pp. 128-129.
-
(2000)
Digest of Technical Papers, IEEE International Solid-State Circuits Conference
, pp. 128-129
-
-
Scheuerlein, R.1
Gallagher, W.2
Parkin, S.3
Lee, A.4
Ray, S.5
Robertazzi, R.6
Reohr, W.7
-
26
-
-
0035054710
-
"A 256 Kb 3.0 V 1T1MTJ Nonvolatile Magnetoresistive RAM"
-
(IEEE Cat. No. 01CH37177)
-
P. K. Naji, M. Durlam, S. Tehrani, J. Calder, and M. F. DeHerrera, "A 256 Kb 3.0 V 1T1MTJ Nonvolatile Magnetoresistive RAM," Digest of Technical Papers, IEEE International Solid-State Circuits Conference (IEEE Cat. No. 01CH37177), 2001, pp. 122-438.
-
(2001)
Digest of Technical Papers, IEEE International Solid-State Circuits Conference
, pp. 122-438
-
-
Naji, P.K.1
Durlam, M.2
Tehrani, S.3
Calder, J.4
DeHerrera, M.F.5
-
27
-
-
0242490989
-
"A Low Power 1 Mbit MRAM Based on 1T1MTJ Bit Cell Integrated with Copper Interconnects"
-
(IEEE Cat. No. 02CH37302)
-
M. Durlam, P. Naji, A. Omair, M. DeHerrera, J. Calder, J. M. Slaughter, B. Engel, N. Rizzo, G. Grynkewich, B. Butcher, C. Tracy, K. Smith, K. Kyler, J. Ren, J. Molla, B. Feil, R. Williams, and S. Tehrani, "A Low Power 1 Mbit MRAM Based on 1T1MTJ Bit Cell Integrated with Copper Interconnects," Digest of Technical Papers, Symposium on VLSI Circuits (IEEE Cat. No. 02CH37302), 2002, pp. 158-161.
-
(2002)
Digest of Technical Papers, Symposium on VLSI Circuits
, pp. 158-161
-
-
Durlam, M.1
Naji, P.2
Omair, A.3
DeHerrera, M.4
Calder, J.5
Slaughter, J.M.6
Engel, B.7
Rizzo, N.8
Grynkewich, G.9
Butcher, B.10
Tracy, C.11
Smith, K.12
Kyler, K.13
Ren, J.14
Molla, J.15
Feil, B.16
Williams, R.17
Tehrani, S.18
-
28
-
-
0000497954
-
"Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure"
-
F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure," Phys. Rev. B 57, R2037 (1998).
-
(1998)
Phys. Rev. B
, vol.57
-
-
Matsukura, F.1
Ohno, H.2
Shen, A.3
Sugawara, Y.4
-
29
-
-
4243098145
-
"Resonant Spin Amplification in GaAs"
-
J. M. Kikkawa and D. D. Awschalom, "Resonant Spin Amplification in GaAs," Phys. Rev. Lett. 80, 4313 (1998).
-
(1998)
Phys. Rev. Lett.
, vol.80
, pp. 4313
-
-
Kikkawa, J.M.1
Awschalom, D.D.2
-
30
-
-
0141636577
-
"Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars"
-
J. A. Katine, F. J. Albert, R. A. Buhrman, E. B. Myers, and D. C. Ralph, "Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars," Phys. Rev. Lett. 84, 3149 (2000).
-
(2000)
Phys. Rev. Lett.
, vol.84
, pp. 3149
-
-
Katine, J.A.1
Albert, F.J.2
Buhrman, R.A.3
Myers, E.B.4
Ralph, D.C.5
-
31
-
-
32944477025
-
"Reduction of Spin Injection Efficiency by Interface Spin Scattering"
-
B. T. Jonker, "Reduction of Spin Injection Efficiency by Interface Spin Scattering," U.S. Patent 5,874,749, 1999.
-
(1999)
U.S. Patent 5,874,749
-
-
Jonker, B.T.1
-
32
-
-
0033576696
-
"Injection and Detection of a Spin-Polarized Current in a Light-Emitting Diode"
-
R. Fiederling, M. Kleim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, "Injection and Detection of a Spin-Polarized Current in a Light-Emitting Diode," Nature 402, 787 (1999).
-
(1999)
Nature
, vol.402
, pp. 787
-
-
Fiederling, R.1
Kleim, M.2
Reuscher, G.3
Ossau, W.4
Schmidt, G.5
Waag, A.6
Molenkamp, L.W.7
-
33
-
-
0034664620
-
"Robust Electrical Spin Injection into Semiconductor Heterostructures"
-
B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrou, "Robust Electrical Spin Injection into Semiconductor Heterostructures," Phys. Rev. B 62, 8180 (2000).
-
(2000)
Phys. Rev. B
, vol.62
, pp. 8180
-
-
Jonker, B.T.1
Park, Y.D.2
Bennett, B.R.3
Cheong, H.D.4
Kioseoglou, G.5
Petrou, A.6
-
34
-
-
0033576573
-
"Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure"
-
Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, "Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure," Nature 402, 790-792 (1999).
-
(1999)
Nature
, vol.402
, pp. 790-792
-
-
Ohno, Y.1
Young, D.K.2
Beschoten, B.3
Matsukura, F.4
Ohno, H.5
Awschalom, D.D.6
-
35
-
-
79956016569
-
"Room Temperature Operation of a High Output Magnetic Tunnel Transistor"
-
S. van Dijken, X. Jiang, and S. S. P. Parkin, "Room Temperature Operation of a High Output Magnetic Tunnel Transistor," Appl. Phys. Lett. 80, 3364 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 3364
-
-
van Dijken, S.1
Jiang, X.2
Parkin, S.S.P.3
-
36
-
-
0042378356
-
"Giant Magnetocurrent Exceeding 3400% in Magnetic Tunnel Transistors with Spin-Value Base Layers"
-
S. van Dijken, X. Jiang, and S. S. P. Parkin, "Giant Magnetocurrent Exceeding 3400% in Magnetic Tunnel Transistors with Spin-Value Base Layers," Appl. Phys. Lett. 83, 951 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 951
-
-
van Dijken, S.1
Jiang, X.2
Parkin, S.S.P.3
-
37
-
-
0042267348
-
"Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source"
-
X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. Solomon, J. Harris, and S. S. P. Parkin, "Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source," Phys. Rev. Lett. 90, 256603 (2003).
-
(2003)
Phys. Rev. Lett.
, vol.90
, pp. 256603
-
-
Jiang, X.1
Wang, R.2
van Dijken, S.3
Shelby, R.4
Macfarlane, R.5
Solomon, G.6
Harris, J.7
Parkin, S.S.P.8
-
38
-
-
0041416287
-
"A Resonant Spin Lifetime Transistor"
-
X. Cartoixá, D. Z.-Y. Ting, and Y.-C. Chang, "A Resonant Spin Lifetime Transistor," Appl. Phys. Lett. 83, 1462 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 1462
-
-
Cartoixá, X.1
Ting, D.Z.-Y.2
Chang, Y.-C.3
-
39
-
-
1942449168
-
"Electronic Analog of the Electro-Optic Modulator"
-
S. Datta and B. Das, "Electronic Analog of the Electro-Optic Modulator," Appl. Phys. Lett. 56, 665 (1990).
-
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 665
-
-
Datta, S.1
Das, B.2
-
40
-
-
79956044821
-
"Femtosecond All-Optical Polarization Switching Based on the Virtual Excitation of Spin-Polarized Electrons in Quantum Wells"
-
E. J. Gansen, K. Jarasiunas, and A. L. Smirl, "Femtosecond All-Optical Polarization Switching Based on the Virtual Excitation of Spin-Polarized Electrons in Quantum Wells," Appl. Phys. Lett. 80, 971 (2002);
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 971
-
-
Gansen, E.J.1
Jarasiunas, K.2
Smirl, A.L.3
-
41
-
-
2342632439
-
"Ultrafast Polarization Modulation Induced by the 'Virtual Excitation' of Spin-Polarized Excitons in Quantum Wells: Application to All-Optical Switching"
-
E. J. Gansen and A. L. Smirl, "Ultrafast Polarization Modulation Induced by the 'Virtual Excitation' of Spin-Polarized Excitons in Quantum Wells: Application to All-Optical Switching," J. Appl. Phys. 95, 3907 (2004).
-
(2004)
J. Appl. Phys.
, vol.95
, pp. 3907
-
-
Gansen, E.J.1
Smirl, A.L.2
-
43
-
-
0000497954
-
"Transport Properties and Origin of Ferromagnetism in (Ga,Mn)As"
-
F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport Properties and Origin of Ferromagnetism in (Ga,Mn)As," Phys. Rev. B 57, R2037 (1998).
-
(1998)
Phys. Rev. B
, vol.57
-
-
Matsukura, F.1
Ohno, H.2
Shen, A.3
Sugawara, Y.4
-
44
-
-
85039355231
-
"High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn Delta Doping"
-
see
-
A. M. Nazmul, T. Amemiya, Y. Shuto, S. Sugahara, and M. Tanaka, "High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn Delta Doping" see http://arxiv.org/cond-mat/0503444 (2005).
-
(2005)
-
-
Nazmul, A.M.1
Amemiya, T.2
Shuto, Y.3
Sugahara, S.4
Tanaka, M.5
-
45
-
-
0346171121
-
"Magnetotransport Properties of (Ga, Mn)Sb"
-
F. Matsukura, E. Abe, and H. Ohno, "Magnetotransport Properties of (Ga, Mn)Sb," J. Appl. Phys. 87, 6442 (2000).
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 6442
-
-
Matsukura, F.1
Abe, E.2
Ohno, H.3
-
46
-
-
79956002629
-
"Above-Room-Temperature Ferromagnetism in GaSb/Mn Digital Alloys"
-
X. Chen, M. Na, M. Cheon, S. Wang, H. Luo, B. D. McCombe, X. Liu, Y. Sasaki, T. Wojtowicz, J. K. Furdyna, S. J. Potashnik, and P. Schiffer, "Above-Room-Temperature Ferromagnetism in GaSb/Mn Digital Alloys," Appl. Phys. Lett. 81, 511 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 511
-
-
Chen, X.1
Na, M.2
Cheon, M.3
Wang, S.4
Luo, H.5
McCombe, B.D.6
Liu, X.7
Sasaki, Y.8
Wojtowicz, T.9
Furdyna, J.K.10
Potashnik, S.J.11
Schiffer, P.12
-
47
-
-
18244377771
-
1-x"
-
1-x," Science 295, 651 (2002).
-
(2002)
Science
, vol.295
, pp. 651
-
-
Park, Y.D.1
Hanbicki, A.T.2
Erwin, S.C.3
Hellberg, C.S.4
Sullivan, J.M.5
Mattson, J.E.6
Ambrose, T.F.7
Wilson, A.8
Spanos, G.9
Jonker, B.T.10
-
48
-
-
0035793357
-
"Room-Temperature Ferromagnetism in Transport Transition Metal-Doped Titanium Dioxide"
-
Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma, "Room-Temperature Ferromagnetism in Transport Transition Metal-Doped Titanium Dioxide," Science 291, 854 (2001).
-
(2001)
Science
, vol.291
, pp. 854
-
-
Matsumoto, Y.1
Murakami, M.2
Shono, T.3
Hasegawa, T.4
Fukumura, T.5
Kawasaki, M.6
Ahmet, P.7
Chikyow, T.8
Koshihara, S.9
Koinuma, H.10
-
49
-
-
0035914916
-
"Room Temperature Ferromagnetic Properties of (Ga, Mn)N"
-
M. L. Reed, N. A. El-Masry, H. H. Stadelmaier, M. E. Ritums, N. J. Reed, C. A. Parker, J. C. Roberts, and S. M. Bedair, "Room Temperature Ferromagnetic Properties of (Ga, Mn)N," Appl. Phys. Lett. 79, 3473 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 3473
-
-
Reed, M.L.1
El-Masry, N.A.2
Stadelmaier, H.H.3
Ritums, M.E.4
Reed, N.J.5
Parker, C.A.6
Roberts, J.C.7
Bedair, S.M.8
-
50
-
-
0037166833
-
2 Semiconductors"
-
2 Semiconductors," Phys. Rev. Lett. 88, 257203 (2002).
-
(2002)
Phys. Rev. Lett.
, vol.88
, pp. 257203
-
-
Cho, S.1
Choi, S.2
Cha, G.-B.3
Hong, S.4
Kim, Y.5
Zhao, Y.-J.6
Freeman, A.J.7
Ketterson, J.B.8
Kim, B.9
Kim, Y.10
Choi, B.-C.11
-
51
-
-
0141458340
-
2-δ"
-
2-δ," Phys. Rev. Lett. 91, 077205 (2003).
-
(2003)
Phys. Rev. Lett.
, vol.91
, pp. 077205
-
-
Ogale, S.B.1
Choudhary, R.J.2
Buban, J.P.3
Lofland, S.E.4
Shinde, S.R.5
Kale, S.N.6
Kulkarni, V.N.7
Higgins, J.8
Lanci, C.9
Simpson, J.R.10
Browning, N.D.11
Das Sarma, S.12
Drew, H.D.13
Greene, R.L.14
Venkatesan, T.15
-
52
-
-
0142121603
-
3-δ: Diluted Magnetic Oxide System with High Curie Temperature"
-
3-δ: Diluted Magnetic Oxide System with High Curie Temperature," Appl. Phys. Lett. 83, 2199-2201 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 2199-2201
-
-
Zhao, Y.G.1
Shinde, S.R.2
Ogale, S.B.3
Higgins, J.4
Choudhary, R.5
Kulkarni, V.N.6
Greene, R.L.7
Venkatesan, T.8
Lofland, S.E.9
Lanci, C.10
Buban, J.P.11
Browning, N.D.12
Das Sarma, S.13
Millis, A.J.14
-
54
-
-
0142059238
-
"Ferromagnetism Above Room Temperature in Bulk and Transparent Thin Films of Mn-Doped ZnO"
-
P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Osorio Guillen, B. Johansson, and G. A. Gehring, "Ferromagnetism Above Room Temperature in Bulk and Transparent Thin Films of Mn-Doped ZnO," Nature Mater. 2, 673 (2003).
-
(2003)
Nature Mater.
, vol.2
, pp. 673
-
-
Sharma, P.1
Gupta, A.2
Rao, K.V.3
Owens, F.J.4
Sharma, R.5
Ahuja, R.6
Osorio Guillen, J.M.7
Johansson, B.8
Gehring, G.A.9
-
55
-
-
4344594318
-
"High-Temperature Ferromagnetism in Manganese-Doped Indium-Tin Oxide Films"
-
J. Philip, N. Theodoropoulou, G. Berera, J. S. Moodera, and B. Satpati, "High-Temperature Ferromagnetism in Manganese-Doped Indium-Tin Oxide Films," Appl. Phys. Lett. 85, 777 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 777
-
-
Philip, J.1
Theodoropoulou, N.2
Berera, G.3
Moodera, J.S.4
Satpati, B.5
-
56
-
-
10044228585
-
"Observation of Ferromagnetism at over 900 K in Cr-doped GaN and AlN"
-
H. X. Liu, S. Y. Wu, R. K. Singh, L. Gu, D. J. Smith, N. R. Dilley, L. Montes, M. B. Simmonds, and N. Newman, "Observation of Ferromagnetism at over 900 K in Cr-doped GaN and AlN," Appl. Phys. Lett. 85, 4076 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 4076
-
-
Liu, H.X.1
Wu, S.Y.2
Singh, R.K.3
Gu, L.4
Smith, D.J.5
Dilley, N.R.6
Montes, L.7
Simmonds, M.B.8
Newman, N.9
-
57
-
-
2942691887
-
"Synthesis and Characterization of High Quality Ferromagnetic Cr-Doped GaN and AlN Thin Films with Curie Temperatures Above 900 K"
-
(2003 Fall Materials Research Society Symposium Proceedings)
-
S. Y. Wu, H. X. Liu, L. Gu, R. K. Singh, M. van Schilfgaarde, D. J. Smith, N. R. Dilley, L. Montes, M. B. Simmonds, and N. Newman, "Synthesis and Characterization of High Quality Ferromagnetic Cr-Doped GaN and AlN Thin Films with Curie Temperatures Above 900 K" (2003 Fall Materials Research Society Symposium Proceedings) Mater. Sci. Forum 798, B10.57.1 (2004).
-
(2004)
Mater. Sci. Forum
, vol.798
-
-
Wu, S.Y.1
Liu, H.X.2
Gu, L.3
Singh, R.K.4
van Schilfgaarde, M.5
Smith, D.J.6
Dilley, N.R.7
Montes, L.8
Simmonds, M.B.9
Newman, N.10
-
58
-
-
0347410948
-
"Modification of Ferromagnetism in Semiconductors by Molecular Monolayers"
-
T. C. Kreutz, E. G. Gwinn, R. Artzi, R. Naaman, H. Pizem, and C. N. Sukenik, "Modification of Ferromagnetism in Semiconductors by Molecular Monolayers," Appl. Phys. Lett. 83, 4211 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 4211
-
-
Kreutz, T.C.1
Gwinn, E.G.2
Artzi, R.3
Naaman, R.4
Pizem, H.5
Sukenik, C.N.6
-
59
-
-
0041429278
-
"Coherent Spin Transfer Between Molecularly Bridged Quantum Dots"
-
M. Ouyang and D. Awschalom, "Coherent Spin Transfer Between Molecularly Bridged Quantum Dots," Science 301, 1074-1078 (2003).
-
(2003)
Science
, vol.301
, pp. 1074-1078
-
-
Ouyang, M.1
Awschalom, D.2
-
60
-
-
0030174367
-
"Current-Driven Excitation of Magnetic Multilayers"
-
J. C. Slonczewski, "Current-Driven Excitation of Magnetic Multilayers," J. Magn. Magn. Mater. 159, L1 (1996).
-
(1996)
J. Magn. Magn. Mater.
, vol.159
-
-
Slonczewski, J.C.1
-
61
-
-
0001317947
-
"Emission of Spin Waves by a Magnetic Multilayer Traversed by a Current"
-
L. Berger, "Emission of Spin Waves by a Magnetic Multilayer Traversed by a Current," Phys. Rev. B 54, 9353 (1996).
-
(1996)
Phys. Rev. B
, vol.54
, pp. 9353
-
-
Berger, L.1
-
62
-
-
11944260932
-
"A 4-Mb 0.18-μm 1T1MTJ Toggle MRAM with Balanced Three Input Sensing Scheme and Locally Mirrored Unidirectional Write Drivers"
-
T. W. Andre, J. J. Nahas, C. K. Subramanian, B. J. Garni, H. S. Lin, A. Omair, and W. L. Martino, Jr., "A 4-Mb 0.18-μm 1T1MTJ Toggle MRAM with Balanced Three Input Sensing Scheme and Locally Mirrored Unidirectional Write Drivers," IEEE J. Solid-State Circuits 40, No. 1, 301-309 (2005).
-
(2005)
IEEE J. Solid-State Circuits
, vol.40
, Issue.1
, pp. 301-309
-
-
Andre, T.W.1
Nahas, J.J.2
Subramanian, C.K.3
Garni, B.J.4
Lin, H.S.5
Omair, A.6
Martino Jr., W.L.7
-
63
-
-
20844455024
-
"Magnetoresistive Random Access Memory Using Magnetic Tunnel Junctions"
-
S. Tehrani, J. M. Slaughter, M. DeHerrera, B. N. Engel, N. D. Rizzo, J. Salter, M. Durlam, R. W. Dave, J. Janesky, B. Butcher, K. Smith, and G. Grynkewich, "Magnetoresistive Random Access Memory Using Magnetic Tunnel Junctions," Proc. IEEE 91, No. 5, 703-714 (2003).
-
(2003)
Proc. IEEE
, vol.91
, Issue.5
, pp. 703-714
-
-
Tehrani, S.1
Slaughter, J.M.2
DeHerrera, M.3
Engel, B.N.4
Rizzo, N.D.5
Salter, J.6
Durlam, M.7
Dave, R.W.8
Janesky, J.9
Butcher, B.10
Smith, K.11
Grynkewich, G.12
-
64
-
-
10044225881
-
"Giant Tunneling Magnetoresistance at Room Temperature with MgO(100) Tunnel Barriers"
-
S. S. P. Parkin, C. Kaiser, A. Panchula, P. Rice, B. Hughes, M. Samant, and S.-H. Yang, "Giant Tunneling Magnetoresistance at Room Temperature with MgO(100) Tunnel Barriers," Nature Mater. 3, 862-867 (2004).
-
(2004)
Nature Mater.
, vol.3
, pp. 862-867
-
-
Parkin, S.S.P.1
Kaiser, C.2
Panchula, A.3
Rice, P.4
Hughes, B.5
Samant, M.6
Yang, S.-H.7
-
65
-
-
10044257857
-
"Giant Room-Temperature Magnetoresistance in Single-Crystal Fe/MgO/Fe Magnetic Tunnel Junctions"
-
S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, "Giant Room-Temperature Magnetoresistance in Single-Crystal Fe/MgO/Fe Magnetic Tunnel Junctions," Nature Mater. 3, 868-871 (2004).
-
(2004)
Nature Mater.
, vol.3
, pp. 868-871
-
-
Yuasa, S.1
Nagahama, T.2
Fukushima, A.3
Suzuki, Y.4
Ando, K.5
-
66
-
-
27144487378
-
"Recent Advances in MRAM Technology"
-
(VLSI TSA TECH)
-
W. J. Gallagher, D. D. Abraham, S. Assefa, S. L. Brown, J. DeBrosse, M. Gaidis, E. Galligan, E. Gow, B. Hughes, J. Hummel, S. Kanakasabapathy, C. Kaiser, M. Lamorey, T. Maffitt, K. Milkove, Y. Lu, J. Nowak, P. Rice, M. Samant, E. O'Sullivan, S. S. P. Parkin, R. Robertazzi, P. Trouilloud, D. Worledge, G. Wright, and S.-H. Yang, "Recent Advances in MRAM Technology," Proceedings of the IEEE International Symposium on VLSI Technology (VLSI TSA TECH), 2005, pp. 72-73.
-
(2005)
Proceedings of the IEEE International Symposium on VLSI Technology
, pp. 72-73
-
-
Gallagher, W.J.1
Abraham, D.D.2
Assefa, S.3
Brown, S.L.4
DeBrosse, J.5
Gaidis, M.6
Galligan, E.7
Gow, E.8
Hughes, B.9
Hummel, J.10
Kanakasabapathy, S.11
Kaiser, C.12
Lamorey, M.13
Maffitt, T.14
Milkove, K.15
Lu, Y.16
Nowak, J.17
Rice, P.18
Samant, M.19
O'Sullivan, E.20
Parkin, S.S.P.21
Robertazzi, R.22
Trouilloud, P.23
Worledge, D.24
Wright, G.25
Yang, S.-H.26
more..
-
67
-
-
34547614634
-
"Shiftable Magnetic Shift Register and Method of Using the Same"
-
S. S. Parkin, "Shiftable Magnetic Shift Register and Method of Using the Same," U.S. Patent 6,834,005, 2004;
-
(2004)
U.S. Patent 6,834,005
-
-
Parkin, S.S.1
-
68
-
-
32944463871
-
"System and Method for Writing to a Magnetic Shift Register"
-
S. S. Parkin, "System and Method for Writing to a Magnetic Shift Register," U.S. Patent 6,898,132, 2005.
-
(2005)
U.S. Patent 6,898,132
-
-
Parkin, S.S.1
-
69
-
-
4143090739
-
"Direct-Current Induced Dynamics in Co90Fe10/Ni80Fe20 Point Contacts"
-
W. H. Rippard, M. R. Pufall, S. Kaka, S. E. Russek, and T. J. Silva, "Direct-Current Induced Dynamics in Co90Fe10/Ni80Fe20 Point Contacts," Phys. Rev. Lett. 92, 027201 (2004).
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 027201
-
-
Rippard, W.H.1
Pufall, M.R.2
Kaka, S.3
Russek, S.E.4
Silva, T.J.5
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