ICs for 100-Gb/s serial operation

IEEE Microwave Magazine

Volumn 10, Issue 2, 2009, Pages 58-67

  Swahn, Thomas ^a   Baeyens, Yves ^b   Meghelli, Mounir ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b LUCENT TECHNOLOGIES   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION AREA; BUILDING BLOCK; FUTURE APPLICATIONS; GREEN BUILDINGS; HIGH DEFINITION; HIGH-SPEED TRANSCEIVERS; HIGHLY INTEGRATED; IC TECHNOLOGY; SERIAL TRANSMISSION; SILICON GERMANIUM HBT; THREE-DIMENSIONAL APPLICATIONS;

COMMUNICATION SYSTEMS; GERMANIUM; INDIUM PHOSPHIDE; INTEGRATED CIRCUITS; TRANSCEIVERS;

BUILDINGS;

EID: 66149173686     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/MMM.2008.931670     Document Type: Article

References (36)

1. S. Melle J. Jaeger D. Perkins V. Vusirikala "Market drivers and implementation options for 100-GbE transport over the W A N" IEEE Commun. Mag., vol. 45, no. 11, pp. 18-24, 2007.
2. J. McDonough "Moving standards to 100 GbE and beyond" IEEE Commun. Mag., vol. 45, no. 11, pp. 6-9, 2007.
3. R. Lai X. B. Mei W. R. Deal W. Yoshida Y. M. Kim P. H. Liu J. Lee J. Uyeda V. Radisic M. Lange T. Gaier L. Samoska A. Fung "Sub 50 nm InP HEMT device with fmax greater than 1 THz" in Proc. IEEE Int. Electron Devices Meeting (IEDM '07), pp. 609-611.
4. M. Feng W. Snodgrass "InP pseudormorphic heterojunction bipolar transistor (PHBT) with ft > 750GHz" in Proc. IEEE 19th Int. Conf. Indium Phosphide Related Materials (IPRM'07), pp. 399-402. (Pubitemid 47486555)
5. Z. Griffith E. Lind M. J. W. Rodwell X.-M. Fang D. Loubychev Y. Wu J. M. Fastenau A. W. K. Liu "Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT" in Proc. IEEE Indium Phosphide Related Materials, 2007, pp. 403-406.
6. Z. Griffith M. Dahlstrm M. J. W. Rodwell M. Urteaga R. Pierson P. Rowell B. Brar S. Lee N. Nguyen C. Nguyen "Ultra high frequency static dividers > 150 GHz in a narrow mesa InGaAs/InP DHBT technology" in Proc. 2004 Meeting Bipolar/BiCMOS Circuits Techn olog y, pp. 176-179.
7. G. He J. Howard M. Le P. Partyka B. Li G. Kim R. Hess R. Bryie R. Lee S. Rustomji J. Pepper M. Kail M. Helix R. B. Elder D. S. Jansen N. E. Harff J. F. Prairie E. S. Daniel B. K. Gi lbert "Selfaligned InP dhbt with ft and fmax over 300 ghz in a new manufacturable technology" IEEE Electron. Device Lett., vol. 25, no. 8, pp. 520-522, 2004.
8. D. A. Hitko T. Hussain J. F. Jensen Y. Royter S. L. Morton D. S. Matthews R. D. Rajavel I. Milosavljevlc C. H. Fields S. Thomas III A. Kurdoghllan Z. Lao K. Elliott M. Sokolfch "A low power (45mW/latch) static 150GHz CML divider" in Proc. IEEE Compound Semiconductor Integrated Circuit Symp., 2004, pp. 167-170.
9. M. Le G. He R. Hess P. Partyka B. Li R. Bryie S. Rustomji G. Kim R. Lee J. Pepper M. Helix R. Milano R. Elder D. Jansen F. Stroili J.-W. Lai M. Feng "Self-aligned InP DHBTs for 150 GHz digital and mixed signal circuits" in Proc. Int. Conf. Indium Phosphide Related Materials, 2005, pp. 325-330. (Pubitemid 44250494)
10. A. Joseph D. Coolbaugh D. Harame C. Freeman S. Subbarma M. Doherty J. Bunn C. Dickey D. Greenberg R. Groves M. Meghelli A. Rylyakov M. Sorna O. Schreiber D. Herman T. Tanji "0.13μm 210GHz fT SiGe HBTs-Expanding the horizons of SiGe BiCMOS" in IEEE Int. Solid-State Circuits Conf. (ISSCC'02), Dig. Tech. Papers, pp. 138-438.
11. J. F. Bulzacchelli M. Meghelli S. V. Rylov W. Rhee A. V. Rylyakov H. A. Ainspan B. D. Parker M. P. Beakes A. Chung T. J. Beukema P. K. Pepeljugoski L. Shan Y. H. Kwark S. Gowda D. J. Friedman "A 10-Gb/s 5-Tap DFE/4-Tap FFE Transceiver in 90-nm CMOS Tec h nolog y" IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2885-2898, 2006.
12. O. Agazzi D. Crivelli M. Hueda H. Carrer G. Luna A. Nazemi C. Grace B. Kobeissy C. Abidin M. Kazemi M. Kargar C. Marquez S. Ramprasad F. Bollo V. Posse S. Wang G. Asmanis G. Eaton N. Swenson T. Lindsay P. Voois "A 90nm CMOS DSP MLSD transceiver with integrated AFE for electronic dispersion compensation of multi-mode optical fibers at 10Gb/s" in IEEE Int. Solid-State Circuits Dig. Tech. Papers, 2008, pp. 232-233.
13. M. Meghelli "A 132-Gb/s 4:1 multiplexer in 0.13-mm SiGebipolar technology" IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2403-2407, 2004.
14. M. Meghelli A. V. Rylyakov S. J. Zier M. Sorna D. Friedman "A 0.18-mm SiGe BiCMOS receiver and transmitter chipset for SONET OC-768 transmission systems" IEEE J. Solid-State Circuits, vol. 38, no. 12, pp. 2147-2154, 2003.
15. T. Beukema M. Sorna K. Selander S. Zier B. L. Ji P. Murfet J. Mason W. Rhee H. Ainspan B. Parker M. Beakes "A 6.4-Gb/s CMOS SerDes core with feed-forward and decisionfeedback equalization" IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2633-2644, 2005.
16. L. Daihyun K. Jonghae J.-O. Plouchar C. Choongyeun D. Kim R. Trzcinski D. Boning "Performance variability of a 90 GHz static CML frequency divider in 65 nm SOI CMOS" in IEEE Int. Solid-State Circuits Conf., ISSCC '07, Dig. Tech. Papers, 2007, pp. 542-543. (Pubitemid 47448164)
17. S. Trotta H. Knapp T. F. Meister K. Aufinger J. Bock W. Simburger A. L. Scholtz "110-Ghz static frequency divider in SiGe bipolar technology" in Proc. IEEE Compound Semiconductor Integrated Circuit Symp., CSICS'05, pp. 291-294.
18. T. Toifl C. Menolfi P. Buchmann C. Hagleitner M. Kossel T. Morf J. Weiss M. Schmatz "A 72 mW 0.03 mm2 inductorless 40 Gb/s CDR in 65 nm SOI CMOS" in ISSCC Dig. Tech. Papers, 2007, pp. 226-227. (Pubitemid 47448009)
19. J. Hallin T. Kjellberg T. Swahn "A 165-Gb/s 4:1 multiplexer in InP DHBT technology" IEEE J. Solid-State Circuits, vol. 41, no. 710, pp. 2209-2214, 2006. (Pubitemid 44523657)
20. D. A. Hitko T. Hussain D. S. Matthews R. D. Rajavel I. Milosavljevic M. Sokolich "State of the art low power (42 mW per flip-flop) 150 GHz+ CML static divider implemented in scaled 0.2 m emitter-width InP DHBTS" in 2006 Int. Conf. Indium Phosphide and Related Materials Conf. Proc, pp. 85-88. (Pubitemid 46287392)
21. M. Moller "Challenges in the cell-based design of very-highspeed SiGe-bipolar ICS at 100 Gb/s" IEEE J. Solid-State Circuits, vol. 43, no. 9, pp. 1877-1888, 2008.
22. T. Suzuki Y. Nakasha T. Takahashi K. Makiyama T. Hirose M. Takikawa "144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTS" in 2004 IEEE MTT-S Int. Microwave Symp. Dig., pp. 117-120.
23. Y. Suzuki Z. Yamazaki Y Amamiya S. Wada H. Uchida C. Kurioka S. Tanaka H. Hida "120-Gb/s multiplexing and 110-Gb/s demultiplexing ICS" IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2397-2402, 2004.
24. Y Suzuki M. Mamada Z. Yamazaki "Over-100-Gb/s 1:2 demultiplexer based on InP HBT technology" IEEE J. Solid-State Circuits, vol. 42, no. 11, pp. 2594-2599, 2007
25. K. Murata K. Sano H. Kitabayashi S. Sugitani H. Sugahara T. Enoki "100-Gb/s multiplexing and demultiplexing IC operations in InP HEMT technology" IEEE J. Solid-State Circuits, vol. 39, no. 1, pp. 207-213, 2004.
26. J. Hallin T. Kjellberg T. Swahn "A 100-Gb/s 1:4 demultiplexer in InP dhbt technology" in Proc. IEEE Compound Semiconductor Integrated Circuit Symp., CSICS'06, pp. 227-230.
27. R. E. Makon R. Driad R. Losch J. Rosenzweig M. Schlechtweg "100 Gbit/s fully integrated InP DHBT-based CDR/1:2 DEMUX IC" in Proc. IEEE Compound Semiconductor Integrated Circuits Symp., CSICS'08, pp. 1-4.
28. C. Schubert R. H. Derksen M. Moller R. Ludwig C. J. Weiske J. Lutz S. Ferber A. Kirstadter G. Lehmann C. Schmidt-Langhorst "Integrated 100-Gb/s ETDM receiver" J. Lightwave Technol., vol. 25, no. 1, pp. 122-130, 2007 (Pubitemid 46566190)
29. S. Masuda T. Takahashi K. Joshin "An over-110-ghz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system" IEEE J. Solid-State Circuits, vol. 38, no. 9, pp. 1479-1484, 2003.
30. Y Baeyens N. Weimann P. Roux A. Leven V. Houtsma R. F. Kopf Y. Yang J. Frackoviak A. Tate J. S. Weiner P. Paschke Y.-K. Chen "High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 VDD) output swing at 40 Gb/s" IEEE J. Solid-State Circuits, vol. 39, no. 10, pp. 1697-1705, 2004.
31. V. Hurm F. Benkhelifa R. Driad R. Losch R. Makon H. Massler J. Rosenzweig M. Schlechtweg H. Walcher "InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation" Electron. Lett., vol. 44, no. 12, pp. 705-706, 2008.
32. S. Shahramian A. C. Carusone P. Schvan S. P. Voinigescu "An 81Gb/s, 1.2V tiala-retimer in standard 65nm CMOS" in Proc. IEEE Compound Semiconductor Integrated Circuits Symp., CSICS'08, pp. 1-4.
33. Y. Baeyens G. Georgiou J. S. Weiner A. Leven V. Houtsma P. Paschke Q. Lee R. F. Kopf Y. Yang L. Chua C. Chen C. T. Liu C. Young-Kai "InP D-HBT ICS for 40-Gb/s and higher bitrate lightwave transceivers" IEEE J. Solid-State Circuits, vol. 37, no. 9, pp. 1152-1159, 2002.
34. B. Agarwal A. E. Schmitz J. J. Brown M. Matloubian M. G. Case M. Le M. Lui M. J. W. Rodwell "112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers" IEEE Trans. Microwave Theory Tech., vol. 46, no. 12, pp. 2553-2559, 1998. (Pubitemid 128738999)
35. Y. Baeyens N. Weimann V. Houtsma J. Weiner Y. Yang J. Frackoviak P. Roux A. Tate Y K. Chen "Submicron InP D-HBT single-stage distributed amplifier with 17 db gain and over 110 GHz bandwidth" in IEEE MTT-S Int. Microwave Symp. Dig., 2006, pp. pp. 5818-821. (Pubitemid 46924352)
36. Y. Baeyens R. Pullela J. P. Mattia H. S. Tsai Y. K. Chen "74-GHz bandwidth inalas/ingaas-InP HBT distributed amplifier with 13-db gain" IEEE Microwave Guided Wave Lett., vol. 9, no. 11, pp. 461-463, 1999. (Pubitemid 30535985)