A low power (45mW/latch) static 150GHz CML divider

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 167-170

  Hitko, Donald A ^a   Hussain, Tahir ^a   Jensen, Joseph F ^a   Royter, Yakov ^a   Morton, Susan L ^a   Matthews, David S ^a   Rajavel, Rajesh D ^a   Milosavljevic, Ivan ^a   Fields, Charles H ^a   Thomas III, Stephen ^a   Kurdoghlian, Ara ^a   Lao, Zhihao ^a   Elliott, Kenneth ^a   Sokolich, Marko ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOCK TRANSISTORS; COLLECTOR CURRENT; CURRENT MODE LOGIC (CML) FREQUENCY; DIRECT DIGITAL SYNTHESIS (DDS);

DEMULTIPLEXING; ELECTRON BEAM LITHOGRAPHY; FLIP FLOP CIRCUITS; POWER SUPPLY CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS;

FREQUENCY DIVIDING CIRCUITS;

EID: 21644473859     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392523     Document Type: Conference Paper

References (8)

1. J.C. Zolper, "Super-scaled InP HBTs for 150 GHz circuits," Electron Devices Meeting, 2003, IEDM '03 Technical Digest, 8-10 Dec. 2003, pp. 30.1.1 - 30.1.4.
2. Z. Griffith, et al., "Ultra High Frequency Static Dividers in a Narrow Mesa InGaAs/InP-DHBT Technology," International Conference on Indium Phosphide and Related Materials Proceedings, 2004, pp. 663-666.
3. A. Rylyakov, T. Zwick, "96 GHz Static Frequency Divider in SiGe Bipolar Technology," IEEE GaAs IC Symposium Digest, 2003, pp. 288-290.
4. Z Griffith et al., "InGaAs-InP MESA DHBTs With Simultaneously High Ft and Fmax and Low Ccb/Ic Ratio," IEEE Electron Device Letters, May 2004, pp 250-252
5. M. Feng, W. Hafez, J.-W. Lai. "Over 500 GHz InP Heterojunction Bipolar Transistors," International Conference on Indium Phosphide and Related Materials Proceedings, 2004, pp 653-658
6. M. Chen, et al., "Patterned n+ Implant into InP Substrates for HBT Subcollector," Accepted for publication in IEEE Transaction of Electron Devices.
7. J.C. Li, et al., "Effects of device design on the thermal properties of InP-based HBTs," International Symposium on Compound Semiconductors Digest, 2003, pp. 205-206.
8. I. Harrison, et al., "Thermal Limitations of InP HBTs in 80- and 160-Gb ICs," IEEE Trans. Electron Devices, April 2004, pp. 529-534