InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) with Ft > 750GHz

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 399-402

  Feng, M ^a   Snodgrass, Williams ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34748896598     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381208     Document Type: Conference Paper

References (6)

1. W. Hafez and M. Feng, IEEE International Electron Devices Meeting, San Francisco, California, 13-15 December 2004, pp. 549.
2. Z. Griffith, M. J. Rodwell, F. Xiao-Ming, D. Loubychev, W. Ying, J. M. Fastenau, and A. W. K. Liu, 2006 IPRM.
3. B.F. Chukung and M. Feng, Electron Lett., vol. 40. P. 1305, 2004
4. H.G. Liu, S.P. Watkins, and C. R. Bolognesi, IEEE Transaction Electron Device, vol 53. no. 3 p539, March, 2006
5. W. Snodgrass, B. Wu, W. Hafez, K. Y. Cheng and M. Feng, APL 88, 222101, 2006
6. W. Snodgrass, W. Hafez, N. Harff and M. Feng, 2006 IEDM.