State of the art low power (42mW per flip-flop) 150GHz+ CML static divider implemented in scaled 0.2 m emitter-width InP DHBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2006, Issue , 2006, Pages 85-88

  Hitko, Donald A ^a   Hussain, Tahir ^a   Matthews, David S ^a   Rajavel, Rajesh D ^a   Milosavljevic, Ivan ^a   Sokolich, Marko ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOCK RATES; COLLECTOR CURRENT DENSITIES; CUTOFF FREQUENCIES; LATERAL SCALING;

CURRENT DENSITY; ENERGY DISSIPATION; FLIP FLOP CIRCUITS; FREQUENCY DIVIDING CIRCUITS; LOGIC CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE;

BIPOLAR TRANSISTORS;

EID: 33847165689     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J.C. Zolper, "Super-scaled InP HBTs for 150 GHz circuits," Electron Devices Meeting, 2003, IEDM '03 Technical Digest, 8-10 Dec. 2003, pp. 30.1.1-30.1.4.
2. W. Hafez and M. Feng, "Lateral scaling of 0.25mm InP/InGaAs SHBTs with InAs emitter cap," Electronics Letters, vol. 40, no. 18, Sept 2004, pp. 1151-1153.
3. T. Hussain, Y. Royter, D. Hitko, M. Montes, M. Madhav, I. Milosavljevic, R. Rajavel, S. Thomas, M. Antcliffe, A. Arthur, Y. Boegeman, and M. Sokolich, "First demonstration of sub-0.25mm-width emitter InP-DHBTs with >400 GHz ft and >400 GHz fmax," IEDM 2004 Technical Digest, 13-15 Dec 2004, pp. 553-556.
4. M. J. W. Rodwell, Z. Griffith, D. Scott, Y. Wei, Y. Dong, V. Paidi, M. Dahlstrom, N. Parthasarathy, C. Kadow, M. Urteaga, R. Pierson, P. Rowell, B. Brar, S. Lee, N. Nguyen, and C. Nguyen, "Transistor and Circuit Design for 100-200 GHz ICs", 2004 IEEE CSIC Symposium, Oct 2004, pp. 207-210.
5. G. He, J. Howard, M. Le, P. Partyka, B. Li, G. Kim, R. Hess, R. Bryie, R. Lee, S. Rustomji, J. Pepper, M. Kail, M. Helix, R. B. Elder, D. S. Jansen, N. E. Harff, J. F. Prairie, E. S. Daniel, and B. K. Gilbert, "Self-aligned InP DHBT with ft and fmax over 300GHz in a new manufacturable technology," IEEE Electron Device Letters, Aug. 2004, pp. 520-522.
6. D. A. Hitko, T. Hussain, J. F. Jensen, Y. Royter, S. L. Morton, D. S. Matthews, R. D. Rajavel, I. Milosavljevic, C. H. Fields, S. Thomas III, A. Kurdoghlian, Z. Lao, K. Elliott, and M. Sokolich, "A Low Power (45mW/latch) Static ISOGHz CML Divider", 2004 IEEE CSIC Symposium, Oct 2004, pp. 167-170.