InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 9, 2002, Pages 1152-1159

  Baeyens, Yves ^a,b   Georgiou, George ^a,b   Weiner, Joseph S ^a,b   Leven, Andreas ^a,b   Houtsma, Vincent ^a,b   Paschke, Peter ^a,c   Lee, Q ^a,d   Kopf, Rose F ^a,b   Yang, Y ^a,b   Chua, L ^a,b   Chen, C ^a,b   Liu, C T ^a,b   Chen, Young Kai ^a,b  

^a IEEE   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c NOKIA RESEARCH CENTER   (United States)

^d Big Bear Networks   (United States)

Author keywords

Heterojunction bipolar transistors; High speed integrated circuits; Indium compounds; Millimeter wave bipolar transistor amplifiers; Millimeter wave bipolar transistor oscillators; Optical receivers; Optical transmitters

Indexed keywords

ANALOG CIRCUITS; DISTRIBUTED PREAMPLIFIER; LIGHTWAVE TRANSCEIVERS; MILLIMETER WAVE BIPOLAR TRANSISTOR AMPLIFIERS; OPTICAL RECEIVERS; OPTICAL TRANSMITTERS; PHASE NOISE;

AMPLIFIERS (ELECTRONIC); BANDWIDTH; ELECTRIC BREAKDOWN; INTEGRATED OPTOELECTRONICS; JITTER; LINEAR INTEGRATED CIRCUITS; MILLIMETER WAVE DEVICES; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; TRANSCEIVERS; VARIABLE FREQUENCY OSCILLATORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036713751     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.801188     Document Type: Conference Paper

References (17)

1. A fully integrated 40-Gb/s clock and data recovery IC with 1:4 DEMUX in SiGe technology
2. Clock and data recovery IC for 40-Gb/s fiber-optic receiver
3. Demonstration of sub-5 ps CML ring oscillator gate delay with reduced parasitic AlInAs/InGaAs HBT
4. A low-power 72.8-GHz static frequency divider in AlInAs-InGaAs HBT technology
5. Dry-etch fabrication of reduced area InGaAs/InP HBTs
6. Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability
7. A comparison of low-frequency noise in GaAs and InP-based HBTs and VCOs
8. Compact InP-based HBT VCOs with a wide tuning range at W- and D-band
9. A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth
10. Design considerations for very-high-speed Si-bipolar ICs operating up to 50 Gb/s
11. A 74-GHz bandwidth InAlAs-InGaAs-InP HBT distributed amplifier with 13-dB gain
12. Capacitive-division traveling-wave amplifier with 340-GHz gain-bandwidth product
13. Loss-compensated distributed baseband amplifier ICs for optical transmission systems
14. Attenuation compensation in distributed amplifier design
15. InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave tranceivers
16. 2
17. Submicron scaling of HBTs