-
1
-
-
0037004969
-
max InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
-
max InP/InGaAs Double Heterojunction Bipolar Transistors With a Thin Pseudomorphic Base, IEEE Electron Device Letters, Vol. 23, 2002, pp. 694-696.
-
(2002)
IEEE Electron Device Letters
, vol.23
, pp. 694-696
-
-
Ida, M.1
Kurishima, K.2
Watanabe, N.3
-
2
-
-
0035899202
-
max = 425 GHz
-
max = 425 GHz, Electronic Letters, vol. 27, 2001, pp. 1096-1098.
-
(2001)
Electronic Letters
, vol.27
, pp. 1096-1098
-
-
Lee, S.1
Kim, H.J.2
Urteaga, M.3
Krishman, S.4
Wei, Y.5
Dahlstrom, M.6
Rodwell, M.7
-
3
-
-
0142084648
-
InP/InGaAs SHBTs with 75nm collector and f 500 GHz
-
W. Hafez, J.-W. Lai, and M. Feng. InP/InGaAs SHBTs with 75nm collector and f 500 GHz, IEEE Electronics Letters, vol. 39, 2003, pp. 1475-1476.
-
(2003)
IEEE Electronics Letters
, vol.39
, pp. 1475-1476
-
-
Hafez, W.1
Lai, J.-W.2
Feng, M.3
-
4
-
-
0043282888
-
STS-768 Multiplexer with full-rate output data retimer in InP HBT
-
A. Hendarman, E. Sovero, K. Witt, and X. Xu, STS-768 Multiplexer With Full-Rate Output Data Retimer in InP HBT, IEEE Journal of Solid-State Circuits, vol. 38, 2003, pp. 1497-1503.
-
(2003)
IEEE Journal of Solid-state Circuits
, vol.38
, pp. 1497-1503
-
-
Hendarman, A.1
Sovero, E.2
Witt, K.3
Xu, X.4
-
5
-
-
0041672436
-
3.9 ps SiGe HBT ECL ring oscilltor and transistor design for minimum gate delay
-
B. Jagannathan, M. Meghelli, K. Chan, J.-S. Rieh, K. Schonenburg, D. Ahlgren, S. Subbanna, and G. Freeman, 3.9 ps SiGe HBT ECL Ring Oscilltor and Transistor Design for Minimum Gate Delay, IEEE Electron Device Letters, Vol. 24, 2003, pp. 324-326.
-
(2003)
IEEE Electron Device Letters
, vol.24
, pp. 324-326
-
-
Jagannathan, B.1
Meghelli, M.2
Chan, K.3
Rieh, J.-S.4
Schonenburg, K.5
Ahlgren, D.6
Subbanna, S.7
Freeman, G.8
-
6
-
-
0036927963
-
SiGe HBT s with cut-off frequency of 350 GHz
-
J.-S. Rieh, B. Jagannathan, H. Chen, K.T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S.-J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, and S. Subbanna, SiGe HBT s with cut-off frequency of 350 GHz, IEDM Technical Digest, 2002, pp. 771-774.
-
(2002)
IEDM Technical Digest
, pp. 771-774
-
-
Rieh, J.-S.1
Jagannathan, B.2
Chen, H.3
Schonenberg, K.T.4
Angell, D.5
Chinthakindi, A.6
Florkey, J.7
Golan, F.8
Greenberg, D.9
Jeng, S.-J.10
Khater, M.11
Pagette, F.12
Schnabel, C.13
Smith, P.14
Stricker, A.15
Vaed, K.16
Volant, R.17
Ahlgren, D.18
Freeman, G.19
Stein, K.20
Subbanna, S.21
more..
-
7
-
-
0036575795
-
max and 207 GHz f in a manufacturable technology
-
max and 207 GHz f in a manufacturable technology, IEEE Electron Device Letter, Vol. 23, 2002, pp. 258-260.
-
(2002)
IEEE Electron Device Letter
, vol.23
, pp. 258-260
-
-
Jagannathan, B.1
Khater, M.2
Pagette, F.3
Rieh, J.-S.4
Angell, D.5
Chen, H.6
Florkey, J.7
Golan, F.8
Greenberg, D.R.9
Groes, R.10
Jeng, S.J.11
Johnson, J.12
Mengistu, E.13
Schonenberg, K.T.14
Schnabel, C.M.15
Smith, P.16
Stricker, A.17
Ahlgren, D.18
Freeman, G.19
Stein, K.20
Subbanna, S.21
more..
-
8
-
-
0842331404
-
SiGe:C BiCMOS technology with 3.6 ps gate delay
-
H. Rucker, B. Heinemann, R. Barth, D. Bolze, J. Drews, U. Haak, W. Hoppner, D. Knoll, K. Kopke, S. Marschmeyer, H. H. Richter, P. Schley, D. Schmidt, r. Scholz, B. Tillack, W. Winkler, H.-E. Wulf, and Y. Yamamoto, SiGe:C BiCMOS technology with 3.6 ps gate delay, IEDM Technical Digest, 2003, pp. 531-534.
-
(2003)
IEDM Technical Digest
, pp. 531-534
-
-
Rucker, H.1
Heinemann, B.2
Barth, R.3
Bolze, D.4
Drews, J.5
Haak, U.6
Hoppner, W.7
Knoll, D.8
Kopke, K.9
Marschmeyer, S.10
Richter, H.H.11
Schley, P.12
Schmidt, D.13
Scholz, R.14
Tillack, B.15
Winkler, W.16
Wulf, H.-E.17
Yamamoto, Y.18
-
9
-
-
0346394363
-
High-speed InP/InGaAs DHBTs with a thin pseudomorphic base
-
M. Ida, K. Kurishima, K, Ishii, and N. Watanabe, High-Speed InP/InGaAs DHBTs with a Thin Pseudomorphic Base, GaAs IC Symposium Technical Digest, 2003, pp. 211-214.
-
(2003)
GaAs IC Symposium Technical Digest
, pp. 211-214
-
-
Ida, M.1
Kurishima, K.2
Ishii, K.3
Watanabe, N.4
-
10
-
-
0348195825
-
96 GHz static frequency divider in SiGe bipolar technology
-
A. Rylyakov and T. Zwick, 96 GHz Static Frequency Divider in SiGe Bipolar Technology, IEEE GaAs Digest, 2003, pp. 288-290.
-
(2003)
IEEE GaAs Digest
, pp. 288-290
-
-
Rylyakov, A.1
Zwick, T.2
-
11
-
-
0036441353
-
100+ GHz static divider-by-2 circuit in InP-DHBT technology
-
M. Mokhtari, C. Fields, and R. D. RajaveI, 100+ GHz static divider-by-2 circuit in InP-DHBT technology, GaAs IC Symposium Technical Digest, 2002, pp. 291-293.
-
(2002)
GaAs IC Symposium Technical Digest
, pp. 291-293
-
-
Mokhtari, M.1
Fields, C.2
Rajavei, R.D.3
-
12
-
-
0030270762
-
VBIC95, the vertical IC bipolar inter-company model
-
C. C. McAndrew, J. A. Seitchik, D. F. Bowers, M. D. Mark Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, D. J. Roulston, M. Schroter, P. Van Wijnen, L. F. Wagner, VBIC95, The Vertical IC Bipolar Inter-Company Model, IEEE Journal of Solid-State Circuits, vol. 31, 1996, pp. 1476-1483.
-
(1996)
IEEE Journal of Solid-state Circuits
, vol.31
, pp. 1476-1483
-
-
McAndrew, C.C.1
Seitchik, J.A.2
Bowers, D.F.3
Mark Foisy, M.D.4
Getreu, I.5
McSwain, M.6
Moinian, S.7
Parker, J.8
Roulston, D.J.9
Schroter, M.10
Van Wijnen, P.11
Wagner, L.F.12
-
13
-
-
12444326284
-
max
-
max, IEEE Electron Device Letters, Vol. 26, 2005, pp. 11-13.
-
(2005)
IEEE Electron Device Letters
, vol.26
, pp. 11-13
-
-
Griffith, Z.1
Dahlsrrom, M.2
Rodwell, M.J.W.3
Fang, X.-M.4
Lubyshev, D.5
Wu, Y.6
Fastenau, J.M.7
Liu, W.K.8
-
14
-
-
21644473859
-
A low power (45mW/latch) static 150GHz CML divider
-
Oct.
-
D.A. Hitko, T. Hussain, J.F. Jensen, Y. Royter, S.L. Morton, D.S. Matthews, R.D. Rajavel, I. Milosavljevlc, C.H. Fields, S. Thomas, A. Kurdoghllan, Z. Lao, K. Elliott, and M. Sokolfch, A low power (45mW/latch) static 150GHz CML divider, IEEE Compound Semiconductor Integrated Circuit Symposium, Oct. 2004 pp. 167 170.
-
(2004)
IEEE Compound Semiconductor Integrated Circuit Symposium
, pp. 167170
-
-
Hitko, D.A.1
Hussain, T.2
Jensen, J.F.3
Royter, Y.4
Morton, S.L.5
Matthews, D.S.6
Rajavel, R.D.7
Milosavljevlc, I.8
Fields, C.H.9
Thomas, S.10
Kurdoghllan, A.11
Lao, Z.12
Elliott, K.13
Sokolfch, M.14
-
15
-
-
20144387253
-
Ultra high frequency static dividers 150 GHz in a narrow mesa InGaAs/InP DHBT technology
-
Z. Griffith, M. Dahlstrm, M.J.W. Rodwell, M. Urteaga, R. Pierson, P. Rowell, B. Brar, S. Lee, N. Nguyen, and C. Nguyen, Ultra high frequency static dividers 150 GHz in a narrow mesa InGaAs/InP DHBT technology, Proceedings of the Bipolar/BiCMOS Circuits and Technology 2004 Meeting, pp. 176 179.
-
Proceedings of the Bipolar/BiCMOS Circuits and Technology 2004 Meeting
, pp. 176179
-
-
Griffith, Z.1
Dahlstrm, M.2
Rodwell, M.J.W.3
Urteaga, M.4
Pierson, R.5
Rowell, P.6
Brar, B.7
Lee, S.8
Nguyen, N.9
Nguyen, C.10
-
16
-
-
15844379193
-
4-Bit adder-accumulator at 41- GHz clock frequency in InP DHBT technology
-
Accepted for future publication
-
S.E. Turner, Jr. R. B. Elder, D. S. Jansen, and D. E. Kotecki, 4-Bit Adder-Accumulator at 41- GHz Clock Frequency in InP DHBT Technology, IEEE Microwave and Wireless Components Letters, Accepted for future publication, 2005.
-
(2005)
IEEE Microwave and Wireless Components Letters
-
-
Turner, S.E.1
Elder Jr., R.B.2
Jansen, D.S.3
Kotecki, D.E.4
-
17
-
-
33747389557
-
InP/GaAsSb type-II DHBTs with f 350 GHz
-
B.F. Chu-Kung, M. Feng, InP/GaAsSb type-II DHBTs with f 350 GHz, IEEE Electron Device Letters, Vol. 25, 2004, pp. 244 246.
-
(2004)
IEEE Electron Device Letters
, vol.25
, pp. 244246
-
-
Chu-Kung, B.F.1
Feng, M.2
-
18
-
-
0030414884
-
InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication
-
M.T. Fresina, .J. Hartmann, G.E. Stillman, InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication, IEEE Electron Device Letters, Vol. 17, 1996, pp. 555 556.
-
(1996)
IEEE Electron Device Letters
, vol.17
, pp. 555556
-
-
Fresina, M.T.1
Hartmann, J.2
Stillman, G.E.3
-
19
-
-
0030387668
-
InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication
-
M.T. Fresina, .J. Hartmann, S. Thomas, D.A. Ahmari, and G.E. Stillman, InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication, International Electron Devices Meeting 1996, pp. 207-210.
-
(1996)
International Electron Devices Meeting
, pp. 207-210
-
-
Fresina, M.T.1
Hartmann, J.2
Thomas, S.3
Ahmari, D.A.4
Stillman, G.E.5
-
20
-
-
3943092602
-
max over 300 GHz in a new manufacturable technology
-
max Over 300 GHz in a New Manufacturable Technology, IEEE Electron Device Letters, Vol. 25, 2004, pp. 520 522.
-
(2004)
IEEE Electron Device Letters
, vol.25
, pp. 520522
-
-
He, G.1
Howard, J.2
Le, M.3
Partyka, P.4
Li, B.5
Kim, G.6
Hess, R.7
Bryie, R.8
Lee, R.9
Rustomji, S.10
Pepper, J.11
Kail, M.12
Helix, M.13
Elder, R.14
Jansen, D.15
Harff, N.16
Prairie, J.17
Daniel, E.18
Gilbert, B.19
|