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Volumn 2005, Issue , 2005, Pages 325-330

Self-aligned InP DHBTs for 150GHz digital and mixed signal circuits

Author keywords

Gilbert Cell; InP DHBT; Mux; Static frequency divider

Indexed keywords

COMMON MODE LOGIC (CML); CUT-OFF FREQUENCY; GILBERT CELL VARIABLE GAIN AMPLIFIER; STATIC FREQUENCY DIVIDER;

EID: 33747388311     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517493     Document Type: Conference Paper
Times cited : (15)

References (20)
  • 1
    • 0037004969 scopus 로고    scopus 로고
    • max InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
    • max InP/InGaAs Double Heterojunction Bipolar Transistors With a Thin Pseudomorphic Base, IEEE Electron Device Letters, Vol. 23, 2002, pp. 694-696.
    • (2002) IEEE Electron Device Letters , vol.23 , pp. 694-696
    • Ida, M.1    Kurishima, K.2    Watanabe, N.3
  • 3
    • 0142084648 scopus 로고    scopus 로고
    • InP/InGaAs SHBTs with 75nm collector and f 500 GHz
    • W. Hafez, J.-W. Lai, and M. Feng. InP/InGaAs SHBTs with 75nm collector and f 500 GHz, IEEE Electronics Letters, vol. 39, 2003, pp. 1475-1476.
    • (2003) IEEE Electronics Letters , vol.39 , pp. 1475-1476
    • Hafez, W.1    Lai, J.-W.2    Feng, M.3
  • 4
  • 10
    • 0348195825 scopus 로고    scopus 로고
    • 96 GHz static frequency divider in SiGe bipolar technology
    • A. Rylyakov and T. Zwick, 96 GHz Static Frequency Divider in SiGe Bipolar Technology, IEEE GaAs Digest, 2003, pp. 288-290.
    • (2003) IEEE GaAs Digest , pp. 288-290
    • Rylyakov, A.1    Zwick, T.2
  • 17
    • 33747389557 scopus 로고    scopus 로고
    • InP/GaAsSb type-II DHBTs with f 350 GHz
    • B.F. Chu-Kung, M. Feng, InP/GaAsSb type-II DHBTs with f 350 GHz, IEEE Electron Device Letters, Vol. 25, 2004, pp. 244 246.
    • (2004) IEEE Electron Device Letters , vol.25 , pp. 244246
    • Chu-Kung, B.F.1    Feng, M.2
  • 18
    • 0030414884 scopus 로고    scopus 로고
    • InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication
    • M.T. Fresina, .J. Hartmann, G.E. Stillman, InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication, IEEE Electron Device Letters, Vol. 17, 1996, pp. 555 556.
    • (1996) IEEE Electron Device Letters , vol.17 , pp. 555556
    • Fresina, M.T.1    Hartmann, J.2    Stillman, G.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.