High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 VDD) output swing at 40 Gb/s

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 10, 2004, Pages 1697-1705

  Baeyens, Yves ^a   Weimann, Nils ^a   Roux, Pascal ^a   Leven, Andreas ^a   Houtsma, Vincent ^a   Kopf, Rose F ^a   Yang, Yang ^a   Frackoviak, John ^a   Tate, Alaric ^a   Weiner, Joseph S ^a   Paschke, Peter ^b   Chen, Young Kai ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

Distributed amplifiers; High voltage broadband amplifiers; Indium phospide heterojunction bipolar transistors; Optical modulator driver amplifier

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; CAPACITANCE; ELECTRIC POTENTIAL; EMITTER COUPLED LOGIC CIRCUITS; JITTER; LIGHT MODULATORS; NATURAL FREQUENCIES; OPTICAL COMMUNICATION; OSCILLATIONS; PHASE SHIFT;

DISTRIBUTED AMPLIFIERS; HIGH-VOLTAGE BROADBAND AMPLIFIERS; OPTICAL MODULATOR DRIVER AMPLIFIERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 5444224943     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.833548     Document Type: Conference Paper

References (25)

1. H.-M. Rein and M. Moller, "Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s," IEEE J. Solid-State Circuits, vol. 31, pp. 1076-1090, Aug. 1996.
2. M. Reinhold, C. Dorschky, E. Rose, R. Pullela, P. Mayer, F. Kunz, Y. Baeyens, T. Link, and J. P. Mattia, "A fully integrated 40-Gb/s clock and data recovery IC with 1:4 DEMUX in SiGe technology," IEEE J. Solid-State Circuits, vol. 36, pp. 1937-1945, Dec. 2001.
3. M. Meghelli, A. V. Rylyakov, and L. Shan, "50-Gb/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial communication systems," IEEE J. Solid-State Circuits, vol. 37, pp. 1790-1794, Dec. 2002.
4. Y. Baeyens, G. Georgiou, J. Weiner, A. Leven, V. Houtsma, P. Paschke, Q. Lee, R. Kopf, Y. Yang, L. Chua, C. Chen, C. T. Liu, and Y. K. Chen, "InPD-HBT IC's for 40-Gb/s and higher bitrate lightwave transceivers," IEEE J. Solid-State Circuits, vol. 37, pp. 1152-1159, Sept. 2002.
5. A. Konczykowska, S. Blayac, F. Jorge, M. Riet, V. Puyal, and J. Godin, "Design and measurement of very high bitrate digital IC's fabricated in InP HBT technology," in IEEE MTT-S Int. Microwave Dig., 2003, pp. 1177-1180.
6. K. Murata, K. Sano, H. Kitabayashi, S. Sugitani, H. Sugahara, and T. Enoki, "100-Gbit/s logic IC using 0.1-μm-gate-length InAlAs/InGaAs/InP HEMTs," in IEDM Tech. Dig., 2002, pp. 937-939.
7. T. Suzuki, T. Takahashi, T. Hirose, and M. Takigawa, "A 80-Gbit/s D-type flip-flop circuit using InP HEMT technology," in Tech. Dig. 2003 GaAs IC Symp., 2003, pp. 165-168.
8. K. Yonegawa and S. Kuwano, "Dispersion-tolerant optical transmission system using duobinary transmitter and binary receiver," J. Lightwave Technol., vol. 15, pp. 1530-1537, Aug. 1997.
9. A. Gnauck et al., "2.5 Tb/s (64 × 42.7 Gb/s) transmission over 40 × 100 km NZDSF using RZ-DPSK format and all-Raman-amplifled spans," in Dig. Optical Fiber Communications Conf., Mar. 2002, pp. 865-877.
10. Z. Lao et al., "40-Gb/s high-power modulator driver IC for lightwave communication systems," IEEE J. Solid-State Circuits, vol. 33, pp. 1520-1526, Oct. 1998.
11. 3 modulator driver," IEEE J. Solid-State Circuits, vol. 37, pp. 1100-1105, Sept. 2002.
12. R. Virk, E. Camargo, R. Hajji, S. Parker, R. Benelbar, S. Notomi, and H. Ohnishi, "40-GHz MMIC's for optical modulator driver applications," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, June 2-7, 2002, pp. 91-94.
13. W. Mouzannar, F. Jorge, S. Vuye, E. Dutisseuil, and R. Lefevre, "40 Gbit/s high performances GaAs pHEMT high voltage modulator driver for long haul optical fiber communications," in 24th Annu. GaAs IC Symp. Tech. Dig., Oct. 20-23, 2002, pp. 163-166.
14. A. Long, J. Buck, and R. Powell, "Design of an opto-electronic modulator driver amplifier for 40-Gb/s data rate systems," J. Lightwave Technol., vol. 20, pp. 2015-2021, Dec. 2002.
15. Y. Baeyens, P. Paschke, V. Houtsma, A. Leven, R. Hocke, S. Weisser, P. Roux, and Y. K. Chen, "Compact high-gain lumped differential 40 Gb/s driver amplifiers in production 0.15 μm PHEMT technology," in 2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symp. Dig., June 8-10, 2003, pp. 67-70.
16. D. McPherson, D. S. Pera, F. Tazlauanu, and S. Voinigescu, "A 3-V fully differential distributed limiting driver for 40 Gb/s optical transmission systems," IEEE J. Solid-State Circuits, vol. 38, pp. 1485-1496, Sept. 2003.
17. Z. Lao, M. Yu, V. Radisic, V. Ho, M. Xu, K. Guinn, S. Lee, and K. C. Wang, "A complete 40 Gb/s front-end chip set in InP SHBTs," in 25th Annu. IEEE GaAs IC Symp. Tech. Dig., Oct. 2003, pp. 35-38.
18. K. Krishnamurthy, R. Vetury, S. J. Xu, S. Jaganathan, K. Cheng, J. Chow, D. Mensa, L. Zhang, I. Gontijo, S. Vu, C. Winczewski, Y.-z. Liu, R. Pullela, and M. Rodwell, "40 Gb/s TDM system using InP HBT IC technology," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, June 8-13, 2003, pp. 1189-1192.
19. pp differential output swing at 40 Gb/s," in 25th Annu. IEEE GaAs IC Symp. Tech. Dig., Oct. 2003, pp. 153-156.
20. T. Wong, A. Freundorfer, B. Beggs, and J. Sitch, "A 10 Gb/s AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier for III-V Mach-Zehnder modulator," IEEE J. Solid-State Circuits, vol. 31, pp. 1388-1393, Oct. 1996.
21. Yang, J. Frackoviak, C. T. Liu, C. Chen, L. Chua, W. Sung, A. Tate, R. Reyes, R. Kopf, R. Ruel, D. Werder, V. Houtsma, G. Georgiou, J. Weiner, Y. Baeyens, and Y. K. Chen, "High-performance and high-uniformity InP/InGaAs/InP D-HBT technology for high-speed optical communication systems," in 24th Annu. IEEE GaAs IC Symp. Tech. Dig., Oct. 2002, pp. 269-272.
22. V. E. Houtsma, J. Frackoviak, R. F. Kopf, R. R. Reyes, W. Sung, A. Tate, Y. Yang, N. G. Weimann, and Y. K. Chen, "Investigation of stressing InP/InGaAs DHBT's under high current density," in Proc. Int. Conf. Compound Semiconductor Manufacturing Technology, Scottsdale, AZ, 2003, pp. 291-294.
23. Y. Baeyens, R. Pullela, J. P. Mattia, H. Tsai, and Y.-K. Chen, "A 74-GHz bandwidth InAlAs-InGaAs/InP HBT distributed amplifier with 13-dB gain," IEEE Microwave Guided Wave Lett., vol. 9, pp. 461-463, 1999.
24. O. Wohlgemuth, P. Paschke, and Y. Baeyens, "SiGe broadband amplifiers with up to 80 GHz bandwidth for optical applications at 43 Gbit/s and beyond," in Proc. 33rd Eur. Microwave Conf., Munich, Germany, Oct. 2003.
25. K. Kobayashi, L. Tran, J. Cowles, T. Block, A. Oki, and D. Streit, "Extending the bandwidth performance of heterojunction bipolar transistor-based distributed amplifiers," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 739-748, May 1996.