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1
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0029233439
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Capacitive division traveling-wave amplifier with 340 GHz gain-bandwidth prod uct
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Orlando, FL
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J. Pusl, B. Agarwal, R. Pullela, L. D. Nguyen, M. V. Le, M. J. W. Rodwell, L. Larson, J. F. Jensen, R. Y. Yu, and M. G. Case,“Capacitive division traveling-wave amplifier with 340 GHz gain-bandwidth prod uct,”in Proc. 1995 IEEE MTT-S Int. Microwave Symp., Orlando, FL, pp. 1661-1664, 1995.
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(1995)
Proc. 1995 IEEE MTT-S Int. Microwave Symp.
, pp. 1661-1664
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Pusl, J.1
Agarwal, B.2
Pullela, R.3
Nguyen, L.D.4
Le, M.V.5
Rodwell, M.J.W.6
Larson, L.7
Jensen, J.F.8
Yu, R.Y.9
Case, M.G.10
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2
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-
0030257655
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Loss-compensated distributed baseband amplifier IC's for optical transmission systems
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Oct
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S. Kimura, Y. Imai, Y. Umeda, and T. Enoki,“Loss-compensated distributed baseband amplifier IC's for optical transmission systems,”IEEE Trans. Microwave Theory Tech., vol. 44, pp. 1688-1693, Oct. 1996.
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(1996)
IEEE Trans. Microwave Theory Tech.
, vol.44
, pp. 1688-1693
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Kimura, S.1
Imai, Y.2
Umeda, Y.3
Enoki, T.4
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3
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0031258456
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A 50-MHz-55-GHz multidecade InP based HBT distributed amplifier
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July
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K. W. Kobayashi, J. Cowles, L. Tran, A. Gutierrez-Aitken, T. R. Block, A. K. Oki, and D. C. Streit,“A 50-MHz-55-GHz multidecade InP based HBT distributed amplifier,”IEEE Microwave Guided Wave Lett., vol. 10, pp. 353-355, July 1997.
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(1997)
IEEE Microwave Guided Wave Lett.
, vol.10
, pp. 353-355
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Kobayashi, K.W.1
Cowles, J.2
Tran, L.3
Gutierrez-Aitken, A.4
Block, T.R.5
Oki, A.K.6
Streit, D.C.7
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4
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0032289734
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80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors
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Dec
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B. Agarwal, Q. Lee, D. Mensa, R. Pullela, J. Guthrie, and M. Rodwell,“80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors,”IEEE Trans. Microwave Theory Tech., vol. 46, pp. 2302-2307, Dec. 1998.
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(1998)
IEEE Trans. Microwave Theory Tech.
, vol.46
, pp. 2302-2307
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Agarwal, B.1
Lee, Q.2
Mensa, D.3
Pullela, R.4
Guthrie, J.5
Rodwell, M.6
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5
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0026941656
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5-60-GHz high-gain distributed amplifier utilizing InP cascode HEMT's
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Oct
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C. Yuen, Y. C. Pao, and N. G. Bechtel,“5-60-GHz high-gain distributed amplifier utilizing InP cascode HEMT's,”IEEE J. Solid-State Circuits, vol. 27, pp. 1434-1438, Oct. 1992.
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(1992)
IEEE J. Solid-State Circuits
, vol.27
, pp. 1434-1438
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Yuen, C.1
Pao, Y.C.2
Bechtel, N.G.3
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6
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0032310078
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A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology
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Atlanta, GA
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M. Sokolich, D. Docter, Y. Brown, A. Kramer, J. Jensen, W. Stanchina, S. Thomas, C. Fields, D. Ahmari, M. Lui, R. Martinez, and J. Duvall,“A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology,”in Proc. IEEE GaAs IC Symp., pp. 117-120, Atlanta, GA, 1998.
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(1998)
Proc. IEEE GaAs IC Symp.
, pp. 117-120
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Sokolich, M.1
Docter, D.2
Brown, Y.3
Kramer, A.4
Jensen, J.5
Stanchina, W.6
Thomas, S.7
Fields, C.8
Ahmari, D.9
Lui, M.10
Martinez, R.11
Duvall, J.12
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7
-
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0032098840
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InP-based HBT technology for next-generation lightwave communications
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June
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K. Kobayashi, A. Oki, A. Guttierrez-Aitken, J. Cowles, L. Tran, T. Block, and D. Streit,“InP-based HBT technology for next-generation lightwave communications,”Microwave J., pp. 22-37, June 1998.
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(1998)
Microwave J.
, pp. 22-37
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-
Kobayashi, K.1
Oki, A.2
Guttierrez-Aitken, A.3
Cowles, J.4
Tran, L.5
Block, T.6
Streit, D.7
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