Ultra high frequency static dividers > 150 GHz in a narrow mesa InGaAs/InP DHBT technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 176-179

  Griffith, Zach ^a   Dahlström, Mattias ^a   Rodwell, Mark J W ^a   Urteaga, Miguel ^b   Pierson, Richard ^b   Rowell, Petra ^b   Brar, Bobby ^b   Lee, Sangmin ^c   Nguyen, Nguyen ^c   Nguyen, Chanh ^c  

^a Santa Barbara   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c Global Communication Semiconductors   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRIC IMPEDANCE; INDIUM COMPOUNDS; INDUCTANCE; INTEGRATED CIRCUITS; MICROSTRIP DEVICES; RESONANCE; TRANSPORT PROPERTIES;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); EMITTER COUPLED LOGIC (ECL); MATERIAL TRANSPORT; STATIC FREQUENCY DIVIDERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 20144387253     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. P. Bhattacharya, "Properties of Lattice-Matched and Strained Indium Gallium Arsenide", INSPEC Institution of Electrical Engineers, 1993
2. max of 300 GHz", Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Fort Worth, TX, 6-8 June, pp. 395-398, 2004
3. c ratio", IEEE Electron Device Letters, vol. 25, no. 5, pp. 250-252, 2004
4. M. Urteaga et al., "Deep Submicron InP DHBT Technology with Electroplated Emitter and Base Contacts", Proc. Device Research Conference, Notre Dame, IN, 21 -23 June, 2004
5. M. Ida et al., "High-Speed InP/InGaAs DHBTs with a Thin Pseudomorphic Base" Conference Proceedings 2003 IEEE GaAs IC, San Diego, CA, 9-12 Nov, pp. 211-214, 2003
6. J. Zolper, "Challenges and Opportunities for InP HBT Mixed Signal Circuit Technology", Proc. IEEE Int. Conf. on Indium Phosphide and Related materials, Santa Barbara, CA, 12-16 May, pp. 8-11, 2003
7. Z. Griffith et al., "Ultra High Frequency Static Dividers in a Narrow Mesa InGaAs/InP DHBT Technology", Proc. IEEE Int. Conf. Indium Phosphide and Related Material, Kagoshima, Japan, pp. 663-666, 31 May-4 June, 2004
8. A. Rylyakov, T. Zwick, "96 GHz Static Frequency Divider in SiGe bipolar technology", IEEE GaAsIC Symposium, San Diego, CA, 9-12 Nov, pp. 288-290, 2003
9. M.J.W. Rodwell et al., "Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs", International Journal of High Speed Electronics and Systems, Vol. 11, No. 1, pp. 159-215, 2001
10. M. Dahlström et al., "Wideband DHBTs Using a Graded Carbon-Doped InGaAs Base" IEEE Electron Device Letters, vol. 24, no. 7, pp. 433-435, 2003