Silicon etching in Cl 2 environment

Applied Surface Science

Volumn 253, Issue 3, 2006, Pages 1581-1583

  Knizikevicius R ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

Cl 2; Ion beam assisted etching; Silicon

Indexed keywords

ADSORPTION; CHLORINE; CONCENTRATION (PROCESS); CURRENT DENSITY; ION BEAMS; MOLECULAR STRUCTURE; REACTIVE ION ETCHING;

ADSORBED LAYERS; ION-TO-NEUTRAL FLUX RATIO; SILICON ETCHING RATE;

SILICON COMPOUNDS;

EID: 33750718138     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.040     Document Type: Article

References (13)

1. Waltenburg H.N., and Yates J.T. Chem. Rev. 95 (1995) 1589
2. Lyubinetsky I., Dohnálek Z., Choyke W.J., and Yates J.T. Phys. Rev. B 58 (1998) 7950
3. Tate M.R., Gosalvez-Blanco D., Pullman D.P., Tsekouras A.A., Li Y.L., Yang J.J., Laughlin K.B., Eckman S.C., Bertino M.F., and Ceyer S.T. J. Chem. Phys. 111 (1999) 3679
4. Tate M.R., Pullman D.P., Li Y.L., Gosalvez-Blanco D., Tsekouras A.A., and Ceyer S.T. J. Chem. Phys. 112 (2000) 5190
5. Dieleman J., Sanders F.H.M., and Zalm P.C. Nucl. Instr. Meth. B 7/8 (1985) 809
6. de Wijs G.A., de Vita A., and Selloni A. Phys. Rev. B 57 (1998) 10021
7. Halicioglu T. Surf. Sci. 445 (2000) L53
8. van Zwol J., van Laar J., Kolfschoten A.W., and Dieleman J. J. Vac. Sci. Technol. B 5 (1987) 1410
9. Oostra D.J., Haring A., van Ingen R.P., and de Vries A.E. J. Appl. Phys. 64 (1988) 315
10. Barker R.A., Mayer T.M., and Pearson W.C. J. Vac. Sci. Technol. B 1 (1983) 37
11. Halicioglu T., and Srivastava D. Surf. Sci. 437 (1999) L773
12. Walch S.P. Surf. Sci. 496 (2002) 271
13. Gray D.C., Sawin H.H., and Butterbaugh J.W. J. Vac. Sci. Technol. A 9 (1991) 779