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Journal of Non-Crystalline Solids

Volumn 254, Issue 1-3, 1999, Pages 38-46

Atomic-scale dynamics during silicon oxidation and the properties of defects at the Si-SiO2 interface

(2) Pantelides, Sokrates T a,b Ramamoorthy, Madhavan a,c

a VANDERBILT UNIVERSITY (United States)

b OAK RIDGE NATIONAL LABORATORY (United States)

c AT AND T LABS RESEARCH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; FILM GROWTH; INTERFACES (MATERIALS); MOS DEVICES; NUCLEATION; OXIDATION; POINT DEFECTS; SILICA; SILICON WAFERS;

INTERSTITIALS;

DIELECTRIC FILMS;

EID: 0032685556 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(99)00444-5 Document Type: Article

Times cited : (4)

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