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Applied Physics Letters

Volumn 76, Issue 12, 2000, Pages 1495-1497

Midinfrared emission from InGaN/GaN-based light-emitting diodes

(3) Hofstetter, Daniel a Faist, Jerome a Bour, David P b

a UNIVERSITY OF NEUCHÂTEL (Switzerland)

b PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001373203 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.126074 Document Type: Article

Times cited : (12)

References (19)

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