Femtosecond intersubband dynamics of electrons in AlGaN/GaN-based high-electron-mobility transistors

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Wang, Z ^a   Reimann, K ^a   Woerner, M ^a   Elsaesser, T ^a   Hofstetter, D ^b   Hwang, J ^c   Schaff, W J ^c   Eastman, L F ^c  

^a MAX BORN INSTITUT   (Germany)

^b Universite de Neuchatel Institut de Physique   (Switzerland)

^c 415 Phillips Hall ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT POLARIZATION; NANOSTRUCTURED MATERIALS; PARAMETRIC AMPLIFIERS; PIEZOELECTRICITY; SEMICONDUCTOR QUANTUM WELLS; TRANSIENTS; TRANSISTORS;

ELECTRON-PHONON COUPLING; INDUCED TRANSMISSION; TOTAL INTERSUBBAND LINEWIDTH;

SEMICONDUCTOR MATERIALS;

EID: 1942516320     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/152     Document Type: Conference Paper

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