Intersubband absorption saturation in InGaAs-AlAsSb quantum wells

IEEE Journal of Quantum Electronics

Volumn 38, Issue 11, 2002, Pages 1515-1520

  Gopal, Achanta Venu ^a,b   Yoshida, Haruhiko ^b   Neogi, Arup ^e   Georgiev, Nikolai ^b,c   Mozume, Teruo ^b   Simoyama, Takasi ^b   Wada, Osamu ^a,b,d   Ishikawa, Hiroshi ^a,b  

^a IEEE

^b WASEDA UNIVERSITY   (Japan)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d KOBE UNIVERSITY   (Japan)

^e NONE

Author keywords

All optical switch; Antimony based quantum wells; Intersubband transitions; Saturation intensity

Indexed keywords

ABSORPTION; CALCULATIONS; COMPUTER SIMULATION; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTRUM ANALYSIS;

ALL-OPTICAL SWITCH; DENSITY MATRIX CALCULATION; DEPHASING TIME; ENERGY RELAXATION; INTERSUBBAND ABSORPTION SATURATION; THERMAL EQUILIBRIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036851243     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.804293     Document Type: Article

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