MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors

Journal of Crystal Growth

Volumn 311, Issue 8, 2009, Pages 2418-2426

  Volz, Kerstin ^a   Koch, Jörg ^a   Höhnsdorf, Falko ^a   Kunert, Bernardette ^a   Stolz, Wolfgang ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

A3. Metalorganic vapour phase epitaxy; B1. Dilute nitrides; B2. Semiconducting III V materials

Indexed keywords

A3. METALORGANIC VAPOUR PHASE EPITAXY; ACTIVE MATERIALS; B1. DILUTE NITRIDES; B2. SEMICONDUCTING III/V MATERIALS; CRYSTAL COMPOSITIONS; GAAS; GAS-PHASE REACTIONS; GROWTH MECHANISMS; III/V SEMICONDUCTORS; METAL-ORGANIC PRECURSORS; METASTABLE MATERIALS; MODEL SYSTEMS; MOVPE GROWTHS; NITROGEN UPTAKES; QUATERNARY MATERIALS; THERMODYNAMIC EQUILIBRIUM;

CRYSTAL GROWTH; CRYSTALS; DESORPTION; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; LIQUIDS; MATERIALS SCIENCE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTOELECTRONIC DEVICES; ORGANOMETALLICS; PHASE INTERFACES; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR GROWTH;

EID: 65249144582     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.210     Document Type: Article

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